Integrated Circuits (ICs)

IR21064S

Obsolete

INFINEON

IC GATE DRVR HI/LOW SIDE 14SOIC

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DocumentsDatasheet

Integrated Circuits (ICs)

IR21064S

Obsolete

INFINEON

IC GATE DRVR HI/LOW SIDE 14SOIC

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR21064S

Channel Type	Independent
Driven Configuration	High-Side or Low-Side
Gate Type	N-Channel MOSFET, IGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	0.8 V, 2.9 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	3.9 mm, 0.154 in
Package / Case	14-SOIC
Rise / Fall Time (Typ) [custom]	150 ns
Rise / Fall Time (Typ) [custom]	50 ns
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IR21064 Series

Part	Gate Type	Channel Type	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	High Side Voltage - Max (Bootstrap) [Max]	Driven Configuration	Number of Drivers	Supplier Device Package	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Input Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Package / Case	Package / Case	Package / Case	Logic Voltage - VIL, VIH	Package / Case
INFINEON IR21064PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	Independent	Through Hole	-40 °C	150 °C	600 V	High-Side or Low-Side	2	14-DIP	150 ns	50 ns	Non-Inverting	20 V	10 VDC	14-DIP	0.3 in	7.62 mm	0.8 V 2.9 V
INFINEON IR21064	IGBT MOSFET (N-Channel) N-Channel MOSFET	Independent	Through Hole	-40 °C	150 °C	600 V	High-Side or Low-Side	2	14-DIP	150 ns	50 ns	Non-Inverting	20 V	10 VDC	14-DIP	0.3 in	7.62 mm	0.8 V 2.9 V
INFINEON IR21064STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	Independent	Surface Mount	-40 °C	150 °C	600 V	High-Side or Low-Side	2		150 ns	50 ns	Non-Inverting	20 V	10 VDC	14-SOIC			0.8 V 2.9 V	0.154 in 3.9 mm
INFINEON IR21064STR	IGBT MOSFET (N-Channel) N-Channel MOSFET	Independent	Surface Mount	-40 °C	150 °C	600 V	High-Side or Low-Side	2		150 ns	50 ns	Non-Inverting	20 V	10 VDC	14-SOIC			0.8 V 2.9 V	0.154 in 3.9 mm
INFINEON IR21064SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	Independent	Surface Mount	-40 °C	150 °C	600 V	High-Side or Low-Side	2		150 ns	50 ns	Non-Inverting	20 V	10 VDC	14-SOIC			0.8 V 2.9 V	0.154 in 3.9 mm
INFINEON IR21064PBF	IGBT MOSFET (N-Channel)	Independent	Through Hole	-40 °C	150 °C	600 V	High-Side or Low-Side	2	14-DIP	150 ns	50 ns	Non-Inverting	20 V	10 VDC	14-DIP	0.3 in	7.62 mm	0.8 V 2.9 V
INFINEON IR21064S	IGBT MOSFET (N-Channel) N-Channel MOSFET	Independent	Surface Mount	-40 °C	150 °C	600 V	High-Side or Low-Side	2		150 ns	50 ns	Non-Inverting	20 V	10 VDC	14-SOIC			0.8 V 2.9 V	0.154 in 3.9 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.66

Description

General part information

IR21064 Series

High-Side or Low-Side Gate Driver IC Non-Inverting 14-SOIC

Documents

Technical documentation and resources