IR21064 Series

Manufacturer: INFINEON

Catalog

DRIVER 600V 2-OUT HIGH SIDE/LOW SIDE NON-INV 14-PIN PDIP TUBE

Part	Gate Type	Channel Type	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	High Side Voltage - Max (Bootstrap) [Max]	Driven Configuration	Number of Drivers	Supplier Device Package	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Input Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Package / Case	Package / Case	Package / Case	Logic Voltage - VIL, VIH	Package / Case
INFINEON IR21064PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	Independent	Through Hole	-40 °C	150 °C	600 V	High-Side or Low-Side	2	14-DIP	150 ns	50 ns	Non-Inverting	20 V	10 VDC	14-DIP	0.3 in	7.62 mm	0.8 V 2.9 V
INFINEON IR21064	IGBT MOSFET (N-Channel) N-Channel MOSFET	Independent	Through Hole	-40 °C	150 °C	600 V	High-Side or Low-Side	2	14-DIP	150 ns	50 ns	Non-Inverting	20 V	10 VDC	14-DIP	0.3 in	7.62 mm	0.8 V 2.9 V
INFINEON IR21064STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	Independent	Surface Mount	-40 °C	150 °C	600 V	High-Side or Low-Side	2		150 ns	50 ns	Non-Inverting	20 V	10 VDC	14-SOIC			0.8 V 2.9 V	0.154 in 3.9 mm
INFINEON IR21064STR	IGBT MOSFET (N-Channel) N-Channel MOSFET	Independent	Surface Mount	-40 °C	150 °C	600 V	High-Side or Low-Side	2		150 ns	50 ns	Non-Inverting	20 V	10 VDC	14-SOIC			0.8 V 2.9 V	0.154 in 3.9 mm
INFINEON IR21064SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	Independent	Surface Mount	-40 °C	150 °C	600 V	High-Side or Low-Side	2		150 ns	50 ns	Non-Inverting	20 V	10 VDC	14-SOIC			0.8 V 2.9 V	0.154 in 3.9 mm
INFINEON IR21064PBF	IGBT MOSFET (N-Channel)	Independent	Through Hole	-40 °C	150 °C	600 V	High-Side or Low-Side	2	14-DIP	150 ns	50 ns	Non-Inverting	20 V	10 VDC	14-DIP	0.3 in	7.62 mm	0.8 V 2.9 V
INFINEON IR21064S	IGBT MOSFET (N-Channel) N-Channel MOSFET	Independent	Surface Mount	-40 °C	150 °C	600 V	High-Side or Low-Side	2		150 ns	50 ns	Non-Inverting	20 V	10 VDC	14-SOIC			0.8 V 2.9 V	0.154 in 3.9 mm