Specification	SSM6N7002CFU,LF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	170 mA
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	0.35 nC
Input Capacitance (Ciss) (Max) @ Vds	17 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-363, SC-88, 6-TSSOP
Power - Max [Max]	285 mW
Rds On (Max) @ Id, Vgs	3.9 Ohm
Supplier Device Package	US6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.1 V

SSM6N7002CFU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 60 V, 0.17 A, 3.9 Ω@10V, SOT-363(US6)

Part	Power - Max [Max]	Configuration	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Technology	Package / Case	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature
Toshiba Semiconductor and Storage SSM6N7002CFU,LF	285 mW	2 N-Channel (Dual)	Surface Mount	170 mA	US6	0.35 nC	17 pF	MOSFET (Metal Oxide)	6-TSSOP SC-88 SOT-363	3.9 Ohm	2.1 V	60 V	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	13419	$ 0.15

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 60 V, 0.17 A, 3.9 Ω@10V, SOT-363(US6)

Technical documentation and resources