High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 60 V, 0.17 A, 3.9 Ω@10V, SOT-363(US6)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 60 V, 0.17 A, 3.9 Ω@10V, SOT-363(US6)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 60 V, 0.17 A, 3.9 Ω@10V, SOT-363(US6)
| Part | Power - Max [Max] | Configuration | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Technology | Package / Case | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 285 mW | 2 N-Channel (Dual) | Surface Mount | 170 mA | US6 | 0.35 nC | 17 pF | MOSFET (Metal Oxide) | 6-TSSOP SC-88 SOT-363 | 3.9 Ohm | 2.1 V | 60 V | 150 °C |