Integrated Circuits (ICs)

IRS2118PBF

Obsolete

IC: DRIVER; SINGLE TRANSISTOR; HIGH-SIDE,GATE DRIVER; DIP8; 1W

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Integrated Circuits (ICs)

Obsolete

IC: DRIVER; SINGLE TRANSISTOR; HIGH-SIDE,GATE DRIVER; DIP8; 1W

Technical Specifications

Parameters and characteristics for this part

Specification	IRS2118PBF

Channel Type	Single
Current - Peak Output (Source, Sink) [custom]	600 mA
Current - Peak Output (Source, Sink) [custom]	290 mA
Driven Configuration	High-Side
Gate Type	N-Channel MOSFET, IGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Inverting
Logic Voltage - VIL, VIH	9.5 V, 6 V
Mounting Type	Through Hole
Number of Drivers	1
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-DIP (0.300", 7.62mm)
Rise / Fall Time (Typ)	75 ns
Rise / Fall Time (Typ)	35 ns
Supplier Device Package	8-PDIP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

Part	Gate Type	Supplier Device Package	Input Type	Logic Voltage - VIL, VIH	High Side Voltage - Max (Bootstrap) [Max]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Rise / Fall Time (Typ)	Rise / Fall Time (Typ)	Driven Configuration	Number of Drivers	Channel Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Package / Case	Package / Case	Package / Case
INFINEON IRS2118SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	8-SOIC	Inverting	6 V 9.5 V	600 V	600 mA	290 mA	-40 °C	150 °C	Surface Mount	75 ns	35 ns	High-Side	1	Single	20 V	10 VDC	0.154 in	8-SOIC	3.9 mm
INFINEON IRS2118SPBF	IGBT MOSFET (N-Channel)	8-SOIC	Inverting	6 V 9.5 V	600 V	600 mA	290 mA	-40 °C	150 °C	Surface Mount	75 ns	35 ns	High-Side	1	Single	20 V	10 VDC	0.154 in	8-SOIC	3.9 mm
INFINEON IRS2118PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	8-PDIP	Inverting	6 V 9.5 V	600 V	600 mA	290 mA	-40 °C	150 °C	Through Hole	75 ns	35 ns	High-Side	1	Single	20 V	10 VDC		8-DIP (0.300" 7.62mm)
INFINEON IRS2118STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	8-SOIC	Inverting	6 V 9.5 V	600 V	600 mA	290 mA	-40 °C	150 °C	Surface Mount	75 ns	35 ns	High-Side	1	Single	20 V	10 VDC	0.154 in	8-SOIC	3.9 mm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Side Gate Driver IC Inverting 8-PDIP

Technical documentation and resources