IRS2118 Series
Manufacturer: INFINEON
IC GATE DRVR HIGH-SIDE 8SOIC
| Part | Gate Type | Supplier Device Package | Input Type | Logic Voltage - VIL, VIH | High Side Voltage - Max (Bootstrap) [Max] | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Rise / Fall Time (Typ) | Rise / Fall Time (Typ) | Driven Configuration | Number of Drivers | Channel Type | Voltage - Supply [Max] | Voltage - Supply [Min] | Package / Case | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 8-SOIC | Inverting | 6 V 9.5 V | 600 V | 600 mA | 290 mA | -40 °C | 150 °C | Surface Mount | 75 ns | 35 ns | High-Side | 1 | Single | 20 V | 10 VDC | 0.154 in | 8-SOIC | 3.9 mm |
INFINEON | IGBT MOSFET (N-Channel) | 8-SOIC | Inverting | 6 V 9.5 V | 600 V | 600 mA | 290 mA | -40 °C | 150 °C | Surface Mount | 75 ns | 35 ns | High-Side | 1 | Single | 20 V | 10 VDC | 0.154 in | 8-SOIC | 3.9 mm |
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 8-PDIP | Inverting | 6 V 9.5 V | 600 V | 600 mA | 290 mA | -40 °C | 150 °C | Through Hole | 75 ns | 35 ns | High-Side | 1 | Single | 20 V | 10 VDC | 8-DIP (0.300" 7.62mm) | ||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 8-SOIC | Inverting | 6 V 9.5 V | 600 V | 600 mA | 290 mA | -40 °C | 150 °C | Surface Mount | 75 ns | 35 ns | High-Side | 1 | Single | 20 V | 10 VDC | 0.154 in | 8-SOIC | 3.9 mm |