Specification	PHPT61010NY-QX

Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	150
Frequency - Transition	145 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-100, SOT-669
Power - Max [Max]	1.5 W
Qualification	AEC-Q101
Supplier Device Package	Power-SO8, LFPAK56
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	370 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

PHPT61010NY-Q Series

100 V, 10 A NPN high power bipolar transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Qualification	Frequency - Transition	Transistor Type	Package / Case	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Power - Max [Max]	Supplier Device Package	Grade	Vce Saturation (Max) @ Ib, Ic
Nexperia USA Inc. PHPT61010NY-QX	150	100 nA	AEC-Q101	145 MHz	NPN	SC-100 SOT-669	175 °C	100 V	Surface Mount	1.5 W	LFPAK56 Power-SO8	Automotive	370 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.86

General part information

NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.

Technical documentation and resources