Catalog
100 V, 10 A NPN high power bipolar transistor
Description
AI
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
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100 V, 10 A NPN high power bipolar transistor
100 V, 10 A NPN high power bipolar transistor
| Part | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Current - Collector Cutoff (Max) [Max] | Qualification | Frequency - Transition | Transistor Type | Package / Case | Operating Temperature | Voltage - Collector Emitter Breakdown (Max) [Max] | Mounting Type | Power - Max [Max] | Supplier Device Package | Grade | Vce Saturation (Max) @ Ib, Ic |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 150 | 100 nA | AEC-Q101 | 145 MHz | NPN | SC-100 SOT-669 | 175 °C | 100 V | Surface Mount | 1.5 W | LFPAK56 Power-SO8 | Automotive | 370 mV |