
Discrete Semiconductor Products
BYV42E-200,127
ActiveWeEn Semiconductors
DIODE ARRAY GP 200V 30A TO220AB
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Discrete Semiconductor Products
BYV42E-200,127
ActiveWeEn Semiconductors
DIODE ARRAY GP 200V 30A TO220AB
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BYV42E-200,127 |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 30 A |
| Current - Reverse Leakage @ Vr | 100 µA |
| Diode Configuration | 1 Pair Common Cathode |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 150 °C |
| Package / Case | TO-220-3 |
| Reverse Recovery Time (trr) | 28 ns |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | TO-220AB |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 200 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 1.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BYV42 Series
Diode Array 1 Pair Common Cathode 200 V 30A Through Hole TO-220-3
Documents
Technical documentation and resources
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