Discrete Semiconductor Products

GCMX010A120B3H1P

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MOSFET MODULES 1200V, 10MOHM SIC MOSFET FULL BRIDGE MODULE

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Discrete Semiconductor Products

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MOSFET MODULES 1200V, 10MOHM SIC MOSFET FULL BRIDGE MODULE

Technical Specifications

Parameters and characteristics for this part

Specification	GCMX010A120B3H1P

Configuration	4 N-Channel (Full Bridge)
Current - Continuous Drain (Id) @ 25°C	201 A
Drain to Source Voltage (Vdss)	1.2 kV
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Qg) (Max) @ Vgs	428 nC
Input Capacitance (Ciss) (Max) @ Vds	10900 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Power - Max [Max]	600 W
Rds On (Max) @ Id, Vgs	14 mOhm
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	4 V

Part	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Technology	Configuration	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]
SemiQ GCMX010A120B3H1P	600 W	201 A	10900 pF	Silicon Carbide (SiC)	4 N-Channel (Full Bridge)	428 nC	Module	Chassis Mount	4 V	1.2 kV	1200 V	14 mOhm	175 °C	-40 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	18	$ 135.87
Mouser	N/A	20	$ 106.37

General part information

MOSFET MODULES 1200V, 10MOHM SIC MOSFET FULL BRIDGE MODULE

Technical documentation and resources