Discrete Semiconductor Products

GCMX010A120B3H1P

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MOSFET MODULES 1200V, 10MOHM SIC MOSFET FULL BRIDGE MODULE

Discrete Semiconductor Products

Active

MOSFET MODULES 1200V, 10MOHM SIC MOSFET FULL BRIDGE MODULE

Technical Specifications

Parameters and characteristics for this part

Specification	GCMX010A120B3H1P

Channel Count	4
Configuration	N-Channel
Configuration - Features	Full Bridge
Current - Continuous Drain (Id) (Tc)	201 A
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Max)	428 nC
Input Capacitance (Ciss) (Max)	10900 pF
Mounting Type	Chassis Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-40 °C
Package / Case	Module
Power - Max (Tc)	600 W
Rds On (Max)	14 mOhm
Technology	Silicon Carbide (SiC)
Vgs(th) (Max)	4 V

Part	Power - Max (Tc)	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	Technology	Channel Count	Configuration - Features	Configuration	Gate Charge (Max)	Package / Case	Mounting Type	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Rds On (Max)	Operating Temperature (Max)	Operating Temperature (Min)
SemiQ GCMX010A120B3H1P	600 W	201 A	10900 pF	Silicon Carbide (SiC)	4	Full Bridge	N-Channel	428 nC	Module	Chassis Mount	4 V	1200 V	14 mOhm	175 °C	-40 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Box	1	$ 145.38	<4d
		10	$ 119.00
Mouser	N/A	1	$ 135.87	<5d
		10	$ 118.24
		100	$ 112.07

3D models and CAD resources for this part

General part information

MOSFET MODULES 1200V, 10MOHM SIC MOSFET FULL BRIDGE MODULE

Technical documentation and resources