Discrete Semiconductor Products
PSMN2R1-30YLEX
ActiveNexperia USA Inc.
MOSFETS N-CHANNEL 25 V, 2.4 M„¦ LOGIC LEVEL MOSFET IN LFPAK USING NEXTPOWER TECHNOLOGY
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Discrete Semiconductor Products
PSMN2R1-30YLEX
ActiveNexperia USA Inc.
MOSFETS N-CHANNEL 25 V, 2.4 M„¦ LOGIC LEVEL MOSFET IN LFPAK USING NEXTPOWER TECHNOLOGY
Technical Specifications
Parameters and characteristics for this part
| Specification | PSMN2R1-30YLEX |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 160 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 7 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 3749 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-100, SOT-669 |
| Power Dissipation (Max) | 124 W |
| Rds On (Max) @ Id, Vgs | 2.17 mOhm |
| Supplier Device Package | Power-SO8, LFPAK56 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PSMN2R1-30YLE Series
N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSonand strong safe operating area, optimized for hot-swap, inrush and linear-mode applications.
Documents
Technical documentation and resources