Specification	PMCPB5530XAX

Configuration	N and P-Channel Complementary
Current - Continuous Drain (Id) @ 25°C	3.6 A, 4.5 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs	10 nC, 13 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	619 pF, 785 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UFDFN Exposed Pad
Power - Max [Max]	490 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	66 mOhm, 34 mOhm
Supplier Device Package	6-HUSON (2x2)
Technology	MOSFET (Metal Oxide)

PMCPB5530XA Series

20 V, complementary Trench MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Configuration	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Package / Case	Grade	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]
Nexperia USA Inc. PMCPB5530XAX	10 nC 13 nC	MOSFET (Metal Oxide)	3.6 A 4.5 A	20 V	34 mOhm 66 mOhm	6-HUSON (2x2)	N and P-Channel Complementary	490 mW	619 pF 785 pF	AEC-Q101	6-UFDFN Exposed Pad	Automotive	Surface Mount	150 °C	-55 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1171	$ 1.00

Description

General part information

PMCPB5530XA Series

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.