20 V, complementary Trench MOSFET
20 V, complementary Trench MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs | Technology | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Configuration | Power - Max [Max] | Input Capacitance (Ciss) (Max) @ Vds | Qualification | Package / Case | Grade | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 10 nC 13 nC | MOSFET (Metal Oxide) | 3.6 A 4.5 A | 20 V | 34 mOhm 66 mOhm | 6-HUSON (2x2) | N and P-Channel Complementary | 490 mW | 619 pF 785 pF | AEC-Q101 | 6-UFDFN Exposed Pad | Automotive | Surface Mount | 150 °C | -55 °C |