| Rectifiers | 1 | Obsolete | |
| Rectifiers | 1 | Obsolete | |
STTH8L06600 V, 8 A Low Drop Ultrafast Diode | Diodes | 3 | Active | The STTH8L06, which is using ST Turbo2 600 V technology, is specially suited as boost diode in discontinuous or critical mode power factor corrections.
The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. |
STTH8R03DJF300 V, 8 A PowerFLAT High Efficiency Ultrafast Diode | Diodes | 1 | Active | High performance diode suited for high frequency DC to DC converters.
Packaged in PowerFLAT 5x6, the STTH8R03DJF is optimized for use in low voltage high frequency inverters. |
STTH8R04400 V, 8 A Ultrafast Switching Rectifier Diode | Single Diodes | 3 | Active | This device uses ST's new 400 V planar Pt doping technology. It is specially suited for switching mode base drive and transistor circuits.
Packaged in through-the-hole and surface mount packages, this device is intended for use in low voltage, high frequency inverters, freewheeling and polarity protection. |
| Single Diodes | 4 | Active | |
STTH8R06-YAutomotive 600 V, 8 A Turbo 2 Ultrafast Diode | Diodes | 1 | Active | The STTH8R06, which uses ST Turbo 2 600 V technology, is specially suited as a boost diode in continuous mode power factor correction and hard switching conditions. This device is also intended for use as a free wheeling diode in power supplies and other power switching applications. |
STTH8S06600 V, 8 A Ultrafast Boost Diode | Rectifiers | 1 | Active | This device is an ultrafast diode based on 600 V Pt doping planar technology.
It can be used in hard switching conditions for power factor corrections. Its extremely low reverse recovery current reduces the switching power losses of the MOSFET and thus increases the overall application efficiency.
This diode is also intended for applications in power supplies and power conversions systems, and all sorts of power switching. |
STTH8S121200 V, 8 A Ultrafast Boost Diode | Discrete Semiconductor Products | 1 | Active | The STTH8S12 is developed using ST’s Turbo 2 1200 V technology. It is well-suited as a boost diode, especially for use in UPS. |
STTH8ST06600 V tandem High Density Extrafast Boost Diode | Single Diodes | 1 | Obsolete | This device is part of ST's second generation of 600 V tandem diodes. It has ultralow switching-losses with a minimized QRRthat makes it perfect for use in circuits working in hard-switching mode. In particular the VF/ QRRtrade-off positions this device between standard ultrafast diodes and silicon-carbide Schottky rectifiers in terms of price/performance ratio.
The device offers a new positioning giving more flexibility to power-circuit designers looking for good performance while still respecting cost constraints.
Featuring ST's Turbo 2 600 V technology, the device is particularly suited as a boost diode in continuous conduction mode power factor correction circuits. |
