| Discrete Semiconductor Products | 1 | Active | |
| Discrete Semiconductor Products | 1 | Active | The STTH1202 uses ST's new 200V planar Pt doping technology, and is specially suited for switching mode base drive and transistor circuits.
Packaged in TO-220AC, TO-220FPAC, and TO-220AC Ins, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection. |
| Discrete Semiconductor Products | 1 | Active | This device that uses ST Turbo 2 600 V technology, is specially suited for use in switching power supplies, and industrial applications, as rectification and freewheeling diode. |
| Discrete Semiconductor Products | 2 | Active | |
| Single Diodes | 1 | Active | The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability, like automotive applications.
These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications.
The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. |
| Diodes | 2 | Active | |
| Diodes | 5 | Active | The STTH12R06, which is using ST Turbo 2 600V technology, is specially suited as boost diode in continuous mode power factor corrections and hard switching conditions.
This device is also intended for use as a free wheeling diode in power supplies and other power switching applications. |
STTH12S06600 V, 12 A Turbo 2 Ultrafast Boost Diode | Discrete Semiconductor Products | 1 | Active | ST's STTH12S06 is a state of the art Ultrafast recovery diode. By the use of 600 V Pt doping Planar technology, this diode will outperform the power factor correction circuits operating in hardswitching conditions. The extremely low reverse recovery current of the STTH12S06, reduces significantly the switching power losses of the MOSFET, and thus increases the efficiency of the application. This allows designers to reduce the size of their heatsinks.
This device is also intended for applications in power supplies and power conversions systems, and other power switching applications. |
STTH12T06600 V, 12 A tandem Extrafast Boost Diode | Discrete Semiconductor Products | 1 | Obsolete | This device is part of ST's second generation of 600 V tandem diodes. It has ultralow switching-losses with a minimized QRR(6.5 nC) that makes it perfect for use in circuits working in hard-switching mode. In particular the VF/QRRtrade-off positions this device between standard ultrafast diodes and silicon-carbide Schottky rectifiers in terms of price/performance ratio.
The device offers a new positioning giving more flexibility to power-circuit designers looking for good performance while still respecting cost constraints.
Featuring ST's Turbo 2 600 V technology, the device is particularly suited as a boost diode in continuous conduction mode power factor correction circuits. |
| Diodes | 2 | Obsolete | |
