STD2HNK60Z-1N-channel 600 V, 3.5 Ohm typ., 2 A SuperMESH Power MOSFET in an IPAK package | FETs, MOSFETs | 1 | Active | These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. |
STD2LN60N-channel 600 V, 4 Ohm typ., 2 A, SuperMESH3(TM) Power MOSFET in DPAK package | Transistors | 1 | Active | These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. |
| Single | 2 | Obsolete | |
STD2N105K5N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in DPAK package | FETs, MOSFETs | 1 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STD2N62K3N-channel 620 V, 3 Ohm typ., 2.2 A SuperMESH3(TM) Power MOSFET in DPAK package | Transistors | 1 | Active | These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. |
STD2N80N-channel 800 V, 3.5 Ohm typ., 2 A MDmesh K5 Power MOSFET in a DPAK package | Transistors | 1 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STD2N95K5N-channel 950 V, 4.2 Ohm typ., 2 A MDmesh K5 Power MOSFET in DPAK package | Transistors | 1 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STD2NC45-1N-CHANNEL 450V 4.1OHM 1.5A IPAK SuperMESH POWER MOSFET | Transistors | 1 | Active | The SuperMESH series is obtained through an extreme optimization of STs well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh products. |
STD2NK100ZN-channel 1000 V, 6.25 Ohm typ., 1.85 A SuperMESH Power MOSFET in a DPAK package | Transistors | 1 | Active | This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. |
STD2NK90Z-1N-channel 900 V, 4.7 Ohm typ., 2.1 A SuperMESH Power MOSFET in an IPAK package | Single FETs, MOSFETs | 1 | Active | This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. |
