STD13N60M2N-channel 600 V, 350 mOhm typ., 11 A MDmesh M2 Power MOSFET in a DPAK package | Single FETs, MOSFETs | 1 | Active | This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. |
STD13N65M2N-channel 650 V, 370 mOhm typ., 10 A MDmesh M2 Power MOSFET in a DPAK package | FETs, MOSFETs | 1 | Active | This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. |
STD13NM60NN-channel 600 V, 280 mOhm typ., 11 A MDmesh II Power MOSFET in a DPAK package | Transistors | 1 | Active | These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |
STD13NM60NDN-channel 600 V, 325 mOhm typ., 11 A FDmesh II Power MOSFET in a DPAK package | FETs, MOSFETs | 1 | Active | This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters. |
| Transistors | 1 | Obsolete | |
STD140N6F7N-channel 60 V, 0.0031 Ohm typ., 80 A STripFET F7 Power MOSFET in a DPAK package | FETs, MOSFETs | 1 | Active | This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
STD14NM50NAGAutomotive-grade N-channel 500 V, 285 mOhm typ., 12 A MDmesh II Power MOSFET in a DPAK package | Transistors | 1 | Active | This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |
STD15N-channel 600 V, 340 mOhm typ., 11 A MDmesh M2 EP Power MOSFET in a DPAK package | Single | 5 | Active | This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. |
STD155N3LH6N-channel 30 V, 0.0024 Ohm, 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in DPAK package | Single FETs, MOSFETs | 1 | Active | These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. |
STD15N50M2AGAutomotive-grade N-channel 500 V, 0.336 Ohm typ., 10 A MDmesh M2 Power MOSFET in a DPAK package | Transistors | 1 | LTB | This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. |
