STMicroelectronics

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

The SD2931-12MR is a gold metallized N-channel MOS field-effect RF power transistor. Electrically identical to the standard SD2931 MOSFET, it is used for 50 V DC large signal applications up to 230 MHz. The SD2931-12MR is mechanically compatible with the SD2931 but offers better thermal capability (25% lower thermal resistance), representing the best-in-class in transistors for ISM applications, where reliability and ruggedness are critical factors. The SD2931-12MR benefits from the latest generation of environmentally designed packing, ruggedized against cyclic high moisture operation and severe storage conditions.