SCTWA70N120G2V-4 Series

Catalog

SILICON CARBIDE POWER MOSFET 1200 V, 21 MOHM TYP., 91 A IN AN HIP247-4 PACKAGE

Part	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs (Max) [Max]	Vgs (Max) [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	FET Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics SCTWA70N120G2V-4	150 nC	TO-247-4	3540 pF	1.2 kV	22 V	-10 V	200 °C	-55 ░C	Through Hole	547 W	4.9 V	MOSFET (Metal Oxide)	TO-247-4	N-Channel	91 A	18 V