| Transistors | 1 | Obsolete | |
STL36DN6F7Dual N-channel 60 V, 23 mOhm typ., 33 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 double island package | FET, MOSFET Arrays | 2 | Active | The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. |
STL38N65M5N-channel 650 V, 0.09 Ohm typ., 22.5 A, MDmesh M5 Power MOSFET in a PowerFLAT 8x8 HV package | Transistors | 1 | Active | This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency. |
STL3N10F7N-channel 800 V, 2.8 Ohm typ., 2 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package | Single FETs, MOSFETs | 2 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STL40DN3LLH5Automotive-grade dual N-channel 30 V, 0.016 Ohm typ., 11 A STripFET H5 Power MOSFET in a PowerFLAT 5x6 double island package | FET, MOSFET Arrays | 2 | Active | This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
STL4LN80K5N-channel 800 V, 2.1 Ohm typ., 2 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package | Single FETs, MOSFETs | 2 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STL4P3LLH6P-Channel 30 V, 0.048 Ohm typ., 4 A STripFET H6 Power MOSFET in PowerFLAT(TM) 2x2 package | Single FETs, MOSFETs | 1 | Active | This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages. |
| FETs, MOSFETs | 1 | Obsolete | |
| FETs, MOSFETs | 1 | Obsolete | |
| Transistors | 1 | Obsolete | |
