STL22N65M5N-channel 650 V, 180 mOhm typ., 15 A MDmesh M5 Power MOSFET in a PowerFLAT 8x8 HV package | Discrete Semiconductor Products | 2 | Active | The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. |
| Discrete Semiconductor Products | 1 | Obsolete | |
STL24N60M6N-channel 600 V, 0.175 Ohm typ., 15 A MDmesh M6 Power MOSFET in a PowerFLAT 8x8 HV package | Discrete Semiconductor Products | 1 | Active | The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. |
STL25N60M2-EPN-channel 600 V, 0.184 Ohm typ., 16 A MDmesh M2 EP Power MOSFET in a PowerFLAT 8x8 HV package | Single FETs, MOSFETs | 2 | Active | This device is an N-channel Power MOSFET developed using MDmesh™ M2 EP enhanced performance technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters. |
STL260N4F7N-channel 40 V, 0.9 mOhm typ., 120 A, STripFET F7 Power MOSFET in a PowerFLAT 5x6 package | FETs, MOSFETs | 1 | Active | This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
STL26N60DM6N-channel 600 V, 175 mOhm typ., 15 A MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 HV package | Single FETs, MOSFETs | 2 | Active | This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. |
STL300N4LF8N-channel logic level 40 V, 1.0 mOhm max., 304 A, STripFET F8 Power MOSFET in a PowerFLAT 5x6 package | Discrete Semiconductor Products | 1 | Active | The STL300N4LF8 is a 40 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure.
It ensures a state-of-the-art of figure of merit for very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching. |
STL305N4LF8AGAutomotive N-Channel Enhancement Mode Logic Level 40V, 1mOhm max, 305A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package | Single | 1 | Active | The STL305N4LF8AG is a 40 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure.
It ensures a state-of-the-art of figure of merit for very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching. |
STL30P3LLH6P-channel 30 V, 0.024 Ohm typ., 30 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a PowerFLAT(TM) 5x6 package | Single | 2 | Active | This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
STL33N60M2N-channel 600 V, 0.115 Ohm typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package | Single FETs, MOSFETs | 2 | Active | The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. |