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STMicroelectronics
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
Beta
⌘K
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
STMicroelectronics EMIF09-SD01F3Obsolete | Filters | FILTER RC(PI) 40 OHM/20PF SMD |
 STMicroelectronics | Integrated Circuits (ICs) | STM32 DYNAMIC EFFICIENCY MCU WITH BAM, HIGH-PERFORMANCE AND DSP WITH FPU, ARM CORTEX-M4 MCU WITH 1 MBYTE OF FLASH MEMORY, 100 MHZ CPU, ART ACCELERATOR, DFSDM |
 STMicroelectronics | Integrated Circuits (ICs) | 32-BIT POWER ARCHITECTURE MCU FOR AUTOMOTIVE BODY AND GATEWAY APPLICATIONS |
STMicroelectronics | Integrated Circuits (ICs) | MCU 32-BIT E200Z0H RISC 128KB FLASH 3.3V/5V AUTOMOTIVE AEC-Q100 64-PIN LQFP T/R |
 STMicroelectronics | Development Boards Kits Programmers | DEMONSTRATION BOARD FOR SINGLE CHANNEL OP-AMP IN SO8 PACKAGE |
 STMicroelectronics LDLN025J30RLTB | Integrated Circuits (ICs) | IC REG LINEAR 3V 250MA 4FLIPCHIP |
 STMicroelectronics ST25RU3993-EVALObsolete | Development Boards Kits Programmers | ST25RU3993 READER IC EVALUATION BOARD |
 STMicroelectronics | Integrated Circuits (ICs) | ARM-BASED 32-BIT MCU+FPU, 84MHZ, 128KB FLASH, 49-PIN WLCSP, -40 TO 85°C T/R |
 STMicroelectronics STP12NM60NObsolete | Discrete Semiconductor Products | MOSFET N-CH 600V 10A TO220AB |
 STMicroelectronics VND1NV04Obsolete | Integrated Circuits (ICs) | IC PWR DRIVER N-CHANNEL 1:1 DPAK |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| FETs, MOSFETs | 1 | Obsolete | ||
| Single | 2 | Obsolete | ||
| Transistors | 1 | Obsolete | ||
STB23N80K5N-channel 800 V, 0.23 Ohm typ., 16 A MDmesh K5 Power MOSFET in D2PAK package | Discrete Semiconductor Products | 1 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STB24N65M2N-channel 650 V, 0.185 Ohm typ., 16 A MDmesh M2 Power MOSFET in D2PAK package | Single FETs, MOSFETs | 1 | Obsolete | These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. |
STB24NM60NN-channel 600 V, 162 mOhm typ., 17 A MDmesh M6 Power MOSFET in a D2PAK package | Single FETs, MOSFETs | 2 | Active | The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. |
| Discrete Semiconductor Products | 4 | Obsolete | ||
STB25N80K5N-channel 800 V, 0.190 Ohm typ., 19.5 A MDmesh K5 Power MOSFET in a D2PAK package | Single FETs, MOSFETs | 1 | Active | These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STB26N60M2N-channel 600 V, 140 mOhm typ., 20 A MDmesh M2 Power MOSFET in a D2PAK package | Discrete Semiconductor Products | 2 | Active | These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |
| Transistors | 1 | Obsolete | ||