STMicroelectronics

The LEOAD128 is a low power, multiplexed 8-input pure CMOS 12-bit analog-to-digital converter specified for conversion from 50 ksps to 1 Msps. The architecture is based on a successive-approximation register with internal track-and-hold. The output serial data is straight binary and is compatible with SPI™. The analog and digital power supplies operate from 2.7 V to 3.6 V, drawing a current consumption of only 2 mA maximum. The LEOAD128 can operate over a large temperature range of -40 °C to +125 °C and it is housed in plastic TSSOP-20, thin-shrink small outline package, 20 leads, using golden bonding and nickel/palladium/golden-lead-finishing to prevent from whiskers. The LEOAD128 is compliant with the ST-LEO-specification, dedicated specification for space-ready rad-hard plastic products. This AEC-Q100-based specification offers a specific trade-off among footprint size savings, cost of ownership and quality assurance together with radiation hardness and large quantity capability.

The LEOLVDSRD is a 3 V to 3.6 V power supply (4.8 V absolute maximum ratings) low voltage differential signaling (LVDS) driver and receiver qualified for use in aerospace environments. It operates over a controlled impedance of 100 ohm transmission media that may be printed circuit board traces, back planes, or cables. The circuit features an internal fail-safe function to ensure a known state in case of an input short-circuit or floating input. All pins have cold spare buffers to ensure they are in high impedance when VCC is tied to GND. The LEOLVDSRD can operate over a large temperature range of -40 °C to +125 °C and it is housed in plastic TSSOP-20, thin-shrink small outline package, 20 leads, using gold-wires and nickel/palladium/golden-lead-finishing to prevent from whiskers. The LEOLVDSRD is compliant with ST-LEO-specification, dedicated specification for space-ready rad-hard plastic products. This AEC-Q100-based specification offers a specific trade-off among footprint size savings, cost of ownership and quality assurance together with radiation hardness and a large quantity capability.

These circuits are high speed J–FET input quad operational amplifiers incorporating well matched, high voltage J–FET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates, low input bias and offset currents, and low offset voltage temperature coefficient.