FERD20S100S100 V, 20 A Field-Effect Rectifier Diode (FERD) | Discrete Semiconductor Products | 2 | Active | The device is based on a proprietary technology that achieves the best in class VF/IRtrade-off for a given silicon surface. This 100 V rectifier has been optimized for use in confined casing applications where both efficiency and thermal performance matter. With a lower dependency of leakage current (IR) and forward voltage (VF) in function of temperature, the thermal runaway risk is reduced. Therefore, it can advantageously replace 100 V Schottky diodes. |
FERD20U60DJFD60 V, 20 A PowerFLAT Ultra-Low Vf Field-Effect Rectifier Diode (FERD) | Rectifiers | 1 | Active | This single rectifier is based on a proprietary technology, enabling to achieve the best in class VF/IR trade-off for a given silicon surface.
Packaged in PowerFLAT™ 5x6, this device is intended to be used in rectification and freewheeling operations in switch-mode power supplies. |
| Discrete Semiconductor Products | 1 | Obsolete | |
FERD30H100S100 V, 30 A Field-Effect Rectifier Diode (FERD) | Discrete Semiconductor Products | 2 | Active | The device is based on a proprietary technology that achieves the best in class VF/IRtrade-off for a given silicon surface. This 100 V rectifier has been optimized for use in confined applications where both efficiency and thermal performance are key. With a lower dependency of leakage current (IR) and forward voltage (VF) in function of temperature, the thermal runaway risk is reduced. It is highly recommended to be used in adapters and chargers. |
FERD30H60C60 V, 30 A dual Field-Effect Rectifier Diode (FERD) | Discrete Semiconductor Products | 2 | Active | The device is based on a proprietary technology that achieves the best in class VF/IRtrade-off for a given silicon surface.
This 60 V rectifier has been optimized for use in confined applications where both efficiency and thermal performance are key.
This device is suitable for use in adapters and chargers. |
FERD30L60C60 V, 30 A dual Low Vf Field-Effect Rectifier Diode (FERD) | Diodes | 2 | Active | The device is based on a proprietary technology that achieves the best in class VF/IRtrade-off for a given silicon surface.
This 60 V rectifier has been optimized for use in confined applications where both efficiency and thermal performance are key.
This device is suitable for use in adapters and chargers. |
| Diodes | 2 | Active | |
FERD30SM100DJF100 V, 30 A PowerFLAT Field-Effect Rectifier Diode (FERD) | Discrete Semiconductor Products | 1 | Active | The FERD30SM100DJF is based on a proprietary technology that achieves the best in class VF/ IRtrade-off for a given silicon surface.
Packaged in PowerFLAT™ 5x6, the FERD30SM100DJF is optimized for use in confined applications where both efficiency and thermal performance are key. |
FERD30SM100S100 V, 30 A TO-220 Field-Effect Rectifier Diode (FERD) | Discrete Semiconductor Products | 1 | Active | The FERD30SM100S is based on a proprietary technology that achieves the best in class VF/IRtrade-off for a given silicon surface.
This 100 V rectifier has been optimized for use in confined applications where both efficiency and thermal performance are key. |
FERD40100 V, 40 A Field-Effect Rectifier Diode (FERD) | Single Diodes | 4 | Active | This single rectifier is based on a proprietary technology, enabling to achieve the best in class VF/IRfor a given silicon surface.
Packaged in TO-220AB, TO-220FPAB and D2PAK, the FERD40H100S is optimized for use in confined applications where both efficiency and thermal performance are key. With a lower dependency of leakage current (IR) and forward voltage (VF) in function of temperature, the thermal runaway risk is reduced. It is highly recommended to be used in adapters and chargers. |
