| Integrated Circuits (ICs) | 1 | Active | |
BD22641G-M0.76A Current Limit High Side Switch ICs | Power Distribution Switches, Load Drivers | 1 | Active | BD22641G-M is a low on-resistance N-channel MOSFET high-side power switch, optimized for Universal Serial Bus (USB) applications. BD22641G-M is equipped with the function of over-current detection, thermal shutdown, under-voltage lockout and soft-start. |
| Power Distribution Switches, Load Drivers | 1 | Active | BD2265G-M is low on-resistance N-channel MOSFET high-side power switch, optimized for Universal Serial Bus (USB) applications. BD226xG-M series are equipped with the function of over-current detection, thermal shutdown, under-voltage lockout and soft-start. |
| Power Management (PMIC) | 1 | Active | BD2266G-M is low on-resistance N-channel MOSFET high-side power switch, optimized for Universal Serial Bus (USB) applications. BD226xG-M series are equipped with the function of over-current detection, thermal shutdown, under-voltage lockout and soft-start. |
| Power Management (PMIC) | 1 | Active | |
| Integrated Circuits (ICs) | 2 | Active | This is the product guarantees long time support in Industrial market. The BD2270HFV is N-ch MOSFET Driver IC for Load Switch Applications Charge pump driver circuit, Discharge circuit, Analog control input circuit are build-in. It’s realized high performance load switch circuit ,using N-ch control input circuit is realized power up sequence control. |
BD2310G1ch 4A High Speed Low-side Gate Driver | Gate Drivers | 1 | Active | BD2310G is 1ch Low-side Gate Driver, which can drive external Nch-FET and IGBT at high speed. BD2310G can supply output current 4A at small package SSOP5. This driver has the VREF pin for external input logic supply voltage and this range is 2.0V to 5.5V. As a protection function, the driver includes an Undervoltage Lockout (UVLO) between VCC and GND. |
BD2311NVX-LBSingle-channel Ultra-Fast Gate Driver for driving GaN Devices | Integrated Circuits (ICs) | 1 | Active | This product is a rank product for the industrial equipment market. This is the best product for use in these applications. BD2311NVX-LB is a single gate driver capable of driving GaN HEMTs at Ultra-Fast with narrow pulses, which can contribute to the long-range and high accuracy of LiDAR. It can supply 5.4A output current in a small 6-pin SON package. As a protection function, the driver includes an Undervoltage Lockout(UVLO) between VCC and GND. |
BD2320UEFJ-LA100V VB 3.5A/4.5A Peak Current High Frequency High-Side and Low-Side Driver | Power Management (PMIC) | 1 | Active | This is the product guarantees long time support in industrial market. BD2320UEFJ-LA is the 100V maximum voltage High-Side and Low-Side gate driver which can drive external Nch-FET using the bootstrap method. The driver includes a 100V bootstrap diode and independent inputs control for High-Side and Low-Side. 3.3V and 5.0V are available for interface voltage. Under Voltage Lockout circuits are built in for High-Side and Low-Side.This IC uses different production line against series model BD2320EFJ-LA for the purpose of improving production efficiency. We recommend using this IC for your new development. Electric characteristics noted in Datasheet does not differ between Production Line. In addition, the data of BD2320EFJ-LA is disclosed for documents and design models unless otherwise specified. |
BD25GA3WNUX300mA 2.5V, Fixed Output, High-Accuracy LDO Regulator | Voltage Regulators - Linear, Low Drop Out (LDO) Regulators | 2 | Active | BDxxGA3WEFJ / BDxxGA3WNUX series devices are LDO regulators with output current capability of 0.3A. It has an output voltage accuracy of ±1%. Both fixed and variable output voltage devices are available. The variable output voltage can be varied from 1.5V to 13.0V using external resistors. Various fixed output voltage devices that do not use external resistors are also available. These LDO regulators are available in HTSOP-J8 / VSON008X2030 package and can be used in wide variety of digital appliances. It has built-in over current protection to protect the device when output is shorted, 0µA shutdown mode, and thermal shutdown circuit to protect the device during thermal over-load conditions. These LDO regulators are usable with ceramic capacitors that enable a smaller layout and longer life. |
