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Rohm Semiconductor

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(9785)

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Part	Category	Description
Rohm Semiconductor ESR03EZPJ914	Resistors	RES 910K OHM 5% 1/4W 0603
Rohm Semiconductor ESR10EZPF4121NRND	Resistors	RES 4.12K OHM 1% 2/5W 0805
Rohm Semiconductor MCR25JZHFLR270Unknown	Resistors	RES 0.27 OHM 1% 1/2W 1210
Rohm Semiconductor ESR10EZPF4R32NRND	Resistors	RES 4.32 OHM 1% 1/2W 0805
Rohm Semiconductor ESR03EZPF2403	Resistors	RES, 240K, 1%, 0.25W, THICK FILM, 0603 ROHS COMPLIANT: YES
Rohm Semiconductor BD4839FVE-TRNRND	Integrated Circuits (ICs)	IC SUPERVISOR 1 CHANNEL 5VSOF
Rohm Semiconductor LTR100JZPJLR39	Resistors	RES SMD 0.39 OHM 5% 3W 2512 WIDE
Rohm Semiconductor LTR10EZPJ562	Resistors	RES 5.6K OHM 5% 1/4W 0805 WIDE
Rohm Semiconductor BD9F800MUX-EVK-001	Development Boards Kits Programmers	EVALUATION BOARD, BUCK CONVERTER ROHS COMPLIANT: YES
Rohm Semiconductor KTR10EZPF2001	Resistors	FIXED RESISTOR, METAL GLAZE/THICK FILM, 0.125W, 2000OHM, 400V, 1% +/-TOL, 100PPM/CEL, SURFACE MOUNT, 0805, CHIP

Series	Category	# Parts	Status	Description

SCT4036KEHR1200V, 43A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive	FETs, MOSFETs	1	Active	AEC-Q101 qualified automotive grade product. SCT4036KEHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
SCT4036KR1200V, 36mΩ, 3-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET	Single FETs, MOSFETs	2	Active	SCT4036KR is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high-speed switching performance that is a feature of SiC MOSFETs.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
SCT4036KRHR1200V, 43A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive	Single FETs, MOSFETs	1	Active	AEC-Q101 qualified automotive grade product. SCT4036KRHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
SCT4036KW71200V, 40A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET	Discrete Semiconductor Products	1	Active	SCT4036KW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
SCT4045DEHR750V, 34A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive	Single FETs, MOSFETs	1	Active	AEC-Q101 qualified automotive grade product. SCT4045DEHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
SCT4045DR750V, 45mΩ, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET	FETs, MOSFETs	2	Active	SCT4045DR is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high-speed switching performance that is a feature of SiC MOSFETs.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
SCT4045DRHR750V, 34A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive	Discrete Semiconductor Products	1	Active	AEC-Q101 qualified automotive grade product. SCT4045DRHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
SCT4045DW7HR750V, 31A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive	Single FETs, MOSFETs	1	Active	AEC-Q101 qualified automotive grade product. SCT4045DW7HR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
SCT4045DWA750V, 31A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET	Discrete Semiconductor Products	1	Active	SCT4045DWA is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
SCT4062KE1200V, 62mΩ, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET	Single FETs, MOSFETs	2	Active	SCT4062KR is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high-speed switching performance that is a feature of SiC MOSFETs.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.