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Rohm Semiconductor

Series List(4442)

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Series	Category	# Parts	Status	Description

Standalone parts(9785)

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Part	Category	Description
Rohm Semiconductor ESR03EZPJ914	Resistors	RES 910K OHM 5% 1/4W 0603
Rohm Semiconductor ESR10EZPF4121NRND	Resistors	RES 4.12K OHM 1% 2/5W 0805
Rohm Semiconductor MCR25JZHFLR270Unknown	Resistors	RES 0.27 OHM 1% 1/2W 1210
Rohm Semiconductor ESR10EZPF4R32NRND	Resistors	RES 4.32 OHM 1% 1/2W 0805
Rohm Semiconductor ESR03EZPF2403	Resistors	RES, 240K, 1%, 0.25W, THICK FILM, 0603 ROHS COMPLIANT: YES
Rohm Semiconductor BD4839FVE-TRNRND	Integrated Circuits (ICs)	IC SUPERVISOR 1 CHANNEL 5VSOF
Rohm Semiconductor LTR100JZPJLR39	Resistors	RES SMD 0.39 OHM 5% 3W 2512 WIDE
Rohm Semiconductor LTR10EZPJ562	Resistors	RES 5.6K OHM 5% 1/4W 0805 WIDE
Rohm Semiconductor BD9F800MUX-EVK-001	Development Boards Kits Programmers	EVALUATION BOARD, BUCK CONVERTER ROHS COMPLIANT: YES
Rohm Semiconductor KTR10EZPF2001	Resistors	FIXED RESISTOR, METAL GLAZE/THICK FILM, 0.125W, 2000OHM, 400V, 1% +/-TOL, 100PPM/CEL, SURFACE MOUNT, 0805, CHIP

Series	Category	# Parts	Status	Description

SCT3017ALHR650V, 118A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive	Single FETs, MOSFETs	1	Active	AEC-Q101 qualified automotive grade product. SCT3017ALHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
SCT3030KLHR1200V, 72A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive	Transistors	5	Active	SCT3030AR is anSiC MOSFETfeaturing a trench gate structure optimized for server power supplies, motor drives, solar power inverters, andEV charging stationsrequiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result, the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.
SCT3040KRHR1200V, 55A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive	Evaluation and Demonstration Boards and Kits	6	Active	SCT3040KR is anSiC MOSFETfeaturing a trench gate structure optimized for a number of applications, including server power supplies,solar power inverters, switch-mode power supplies, motor drives, induction heating, andEV charging stationsrequiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.
SCT3060ARHR650V, 39A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive	Single	4	Active	SCT3060AR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.
SCT3080KRHR1200V, 31A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive	Single	7	Active	SCT3080KR is anSiC MOSFETfeaturing a trench gate structure optimized for server power supplies, solar power inverters, andEV charging stationsrequiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.
SCT3105KRHR1200V, 24A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive	Single	3	Active	AEC-Q101 qualified automotive grade product. SCT3105KRHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
SCT3120AW7650V 21A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET	Single FETs, MOSFETs	2	Active	SCT3120AW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
SCT3160KLHR1200V, 17A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive	Discrete Semiconductor Products	2	Active	AEC-Q101 qualified automotive grade product. SCT3160KLHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
SCT4013DE750V, 105A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET	FETs, MOSFETs	1	Active	SCT4013DE is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
SCT4013DR750V, 13mΩ, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET	Transistors	1	Active	SCT4013DR is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high-speed switching performance that is a feature of SiC MOSFETs.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.