Rohm Semiconductor

This product is a rank product for the industrial equipment market. This is the best product for use in these applications. BM6GD11BFJ-LB is a 1-channel gate driver with built-in isolation, capable of driving GaN HEMTs at high speeds. It has an isolation voltage of2500 Vrms, a maximum input/output delay time of 60ns, and a minimum input pulse width of 65ns. The output driver pins on the source and sink sides are separated. These pins generate a switching waveform with slew rate at the rising and falling edges individually adjusted by inserting a resistor between the gate pins of the GaN HEMT. In addition, an under-voltage lockout function (UVLO) is built into the input side (between VCC1 and GND1) and the output side (between VCC2 and GND2), respectively.

BM81810MUF-M is a power management IC for TFT-LCD panels which are used in car navigation, in-vehicle center panel, and instrument cluster. This IC incorporates VCOM amplifier, Gate Pulse Modulation (GPM) in addition to the power supply for panel driver (SOURCE, GATE, and LOGIC power supplies). Moreover, this IC has a built-in EEPROM for sequence and output voltage setting retention.

BM81810MUV-M is a power management IC for TFT-LCD panels which are used in car navigation, in-vehicle center panel, and instrument cluster. This IC incorporates VCOM amplifier, Gate Pulse Modulation (GPM) in addition to the power supply for panel driver (SOURCE, GATE, and LOGIC power supplies). Moreover, this IC has a built-in EEPROM for sequence and output voltage setting retention.