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ON Semiconductor

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Series	Category	# Parts	Status	Description

MBRAF3603 A, 60 V Schottky Rectifier	Discrete Semiconductor Products	1	Obsolete	This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.
MBRB1045Schottky Power Rectifier, Switch-mode, 10 A, 45 V	Single	3	Obsolete	The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.
MBRB1545CTSchottky Power Rectifier, Switch-mode, 15 A, 45 V	Diode Arrays	3	Active	This Schottky Rectifier uses the Schottky Barrier principle with a platinum barrier metal.
MBRB1645Schottky Barrier Rectifier, 16 A, 45 V	Single	4	Active	This Schottky Rectifier uses the Schottky Barrier principle with a platinum barrier metal.
MBRB20100CTSchottky Barrier Rectifier, 100 V, 20 A	Diodes	2	Obsolete	This Schottky Rectifier uses the Schottky Barrier principle with a platinum barrier metal.
MBRB20200CTSchottky Barrier Rectifier, 200 V, 20 A	Arrays	2	Active	The Schottky Rectifier uses Schottky Barrier technology with a platinum barrier metal. This state of the art device is designed for use in high frequency switching power supplies and converters with up to 48 volt outputs. This device blocks up to 200 volts and offers improved Schottky performance at frequencies from 250 kHz to 5.0MHz.
MBRB2060CTSchottky Barrier Rectifier, 60 V, 20 A	Arrays	5	Active	This Schottky Rectifier uses the Schottky Barrier principle with a platinum barrier metal.
MBRB2515LSchottky Barrier Rectifier, 15 V, 25 A	Discrete Semiconductor Products	3	Obsolete	The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.
MBRB2535CTLSchottky Barrier Rectifier, 35 V, 25 A	Diode Arrays	2	Obsolete	This Schottky Rectifier uses the Schottky Barrier principle with a platinum barrier metal.
MBRB2545CTSchottky Power Rectifier, Switch-mode, 30 A, 45 V	Rectifiers	2	Active	This Schottky Rectifier uses the Schottky Barrier principle with a platinum barrier metal.

Standalone parts(10272)

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Part	Category	Description
ON Semiconductor NCV8402AMNWT1G	Integrated Circuits (ICs)	SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL
ON Semiconductor 74AC32PCObsolete	Integrated Circuits (ICs)	IC GATE OR 4CH 2-INP 14MDIP
ON Semiconductor FGI3236-F085	Discrete Semiconductor Products	IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION
ON Semiconductor FAN1655MTFXObsolete	Integrated Circuits (ICs)	IC REG CTRLR DDR 1OUT 16TSSOP
ON Semiconductor FIN1027MObsolete	Integrated Circuits (ICs)	LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC
ON Semiconductor TMC2111AR3C	Integrated Circuits (ICs)	PIPELINE REGISTER, 8-BIT PQCC28
ON Semiconductor SLV4HC4053ADWRGObsolete	Integrated Circuits (ICs)	LDO REGULATOR, ULTRA-LOW NOISE,
ON Semiconductor FOD4218V	Isolators	OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES
ON Semiconductor NVMFD5483NLT1GObsolete	Discrete Semiconductor Products	DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ
ON Semiconductor 2SD1804S-TL-E	Discrete Semiconductor Products	BIP NPN 8A 50V