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ON Semiconductor
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
Beta
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| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
 ON Semiconductor | Integrated Circuits (ICs) | SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL |
 ON Semiconductor 74AC32PCObsolete | Integrated Circuits (ICs) | IC GATE OR 4CH 2-INP 14MDIP |
 ON Semiconductor | Discrete Semiconductor Products | IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION |
 ON Semiconductor FAN1655MTFXObsolete | Integrated Circuits (ICs) | IC REG CTRLR DDR 1OUT 16TSSOP |
 ON Semiconductor FIN1027MObsolete | Integrated Circuits (ICs) | LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC |
 ON Semiconductor | Integrated Circuits (ICs) | PIPELINE REGISTER, 8-BIT PQCC28 |
ON Semiconductor SLV4HC4053ADWRGObsolete | Integrated Circuits (ICs) | LDO REGULATOR, ULTRA-LOW NOISE, |
 ON Semiconductor | Isolators | OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES |
 ON Semiconductor NVMFD5483NLT1GObsolete | Discrete Semiconductor Products | DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ |
ON Semiconductor | Discrete Semiconductor Products | BIP NPN 8A 50V |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Single | 2 | Obsolete | ||
FFB20U20DN_F085200V, 10A, 1.15V, D2PAK<BR> Ultrafast Dual Rectifier | Diodes | 1 | Active | The FFB20UP20DN_F085 is an ultrafast rectifier. It hasa low forward voltage drop and is a silicon nitride passivatedion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clampingrectifier in a variety of switching power supplies and otherpower switching applications. Its low stored charge andhyperfast recovery minimize ringing and electrical noise inmany power switching circuits, thus reducing power loss inthe switching transistors.Absolute Maximum Ratings TC = 25°C unless otherwise notedThermal Characteristics TC = 25°C unless otherwise notedPackage Marking |
FFB20UP30DN20A, 300V, Ultrafast Dual Diode | Rectifiers | 1 | Obsolete | The FFB20UP30DN is an ultrafast dual diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. It is specially suited for use in switching power supplies and industrial applicationa as welder and UPS application. |
FFB2222ANPN Multi-Chip General Purpose Amplifier | Bipolar Transistor Arrays | 1 | Obsolete | This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. |
FFB2907APNP Multi-Chip General Purpose Amplifier | Bipolar (BJT) | 1 | Active | This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. |
FFB3946Dual NPN 40 V, 200 mA General Purpose Bipolar Junction Transistor | Arrays | 4 | Active | This complementary device is designed for use as a general-purpose amplifier and switch, The useful dynamic range extends to 100 mA as a switch and 100 MHz as an amplifier. Sourced from Process 23 and 66. See FFB3904 (NPN) and FFB3906 (PNP) for characteristics. |
FFB5551NPN Multi-Chip General Purpose Amplifier | Bipolar (BJT) | 1 | Active | NPN Multi-Chip General Purpose Amplifier |
FFD04H60S4A, 600V, Hyperfast II Diode | Single Diodes | 2 | Active | The FFD04H60S is a hyperfast II diode and silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling/clamping diodes in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. |
FFD08S60S_F085600V, 8A, 2.1V, DPAK<BR>STEALTH™ II Rectifier | Diodes | 1 | Obsolete | The FFD08S60S_F085 is stealth 2 rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. |
| Discrete Semiconductor Products | 1 | Obsolete | ||