ON Semiconductor

The FAN3121 and FAN3122 MOSFET drivers are designed to drive N-channel enhancement MOSFETs in low-side switching applications by providing high peak current pulses. The drivers are available with either TTL input thresholds (FAN312xT) or VDD-proportional CMOSinput thresholds (FAN312xC). Internal circuitry provides an under-voltage lockout function by holding the output low until the supply voltage is within the operating range.FAN312x drivers incorporate the MillerDrive™ architecture for the final output stage. This bipolar / MOSFET combination provides the highest peak current during the Miller plateau stage of the MOSFET turn-on / turn-off process.The FAN3121 and FAN3122 drivers implement an enable function on pin 3 (EN), previously unused in the industry-standard pin-out. The pin is internally pulled up to VDD for active HIGH logic and can be left open for standard operation.The commercial FAN3121/22 is available in a 3x3 mm 8-lead thermally-enhanced MLP package or an 8-lead SOIC package.

The FAN3180 combines a high-speed low-side gate driver with a 3.3 V output Low Drop Out (LDO). The gate driver is rated to 2.8 A peak current at VDDof 12 V and is designed to drive an N-channel enhancement-mode MOSFET in low-side switching applications. The FAN3180 also integrates a 3.3 V, 15 mA LDO with tight voltage tolerance of ±1% at 25°C and ±2.5% of total variation for powering external microcontrollers.Internal circuitry provides an Under-Voltage Lockout (UVLO) function by holding the output low until the supply voltage is within the operating range and the first full input pulse is detected. The FAN3180 has UVLO thresholds of 4.75 V VONand 4.55 V VOFFand a maximum standby supply current of 200 µA.The driver delivers fast MOSFET switching performance to maximize efficiency in high-frequency power converter designs. It incorporates the MillerDrive™ architecture for the final output driver stage. This bipolar-MOSFET combination provides high peak current during the Miller plateau stage of the MOSFET turn-on / turn-off process to minimize switching loss, while providing rail-to-rail voltage swing and reverse-current capability. Thermal shutdown function is included as an additional safety feature.

The FAN3213 and FAN3214 dual 4 A gate drivers are designed to drive N-channel enhancement-mode MOSFETs in low-side switching applications by providing high peak current pulses during the short switching intervals. They are both available with TTL input thresholds. Internal circuitry provides an under-voltage lockout function by holding the output LOW until the supply voltage is within the operating range. In addition, the drivers feature matched internal propagation delays between A and B channels for applications requiring dual gate drives with critical timing, such as synchronous rectifiers. This also enables connecting two drivers in parallel to effectively double the current capability driving a single MOSFET.The FAN3213/14 drivers incorporate MillerDrive™ architecture for the final output stage. This bipolar-MOSFET combination provides high current during the Miller plateau stage of the MOSFET turn-on / turn-off process to minimize switching loss, while providing rail-to-rail voltage swing and reverse current capability.The FAN3213 offers two inverting drivers and the FAN3214 offers two non-inverting drivers. Both are offered in a standard 8-pin SOIC package.

The FAN3213 and FAN3214 dual 4 A gate drivers are designed to drive N-channel enhancement-mode MOSFETs in low-side switching applications by providing high peak current pulses during the short switching intervals. They are both available with TTL input thresholds. Internal circuitry provides an under-voltage lockout function by holding the output LOW until the supply voltage is within the operating range. In addition, the drivers feature matched internal propagation delays between A and B channels for applications requiring dual gate drives with critical timing, such as synchronous rectifiers. This also enables connecting two drivers in parallel to effectively double the current capability driving a single MOSFET.The FAN3213/14 drivers incorporate MillerDrive™ architecture for the final output stage. This bipolar-MOSFET combination provides high current during the Miller plateau stage of the MOSFET turn-on / turn-off process to minimize switching loss, while providing rail-to-rail voltage swing and reverse current capability.The FAN3213 offers two inverting drivers and the FAN3214 offers two non-inverting drivers. Both are offered in a standard 8-pin SOIC package.

The FAN3216 and FAN3217 dual 2A gate drivers are designed to drive N-channel enhancement-mode MOSFETs in low-side switching applications by providing high peak current pulses during the short switching intervals. They are both available with TTL input thresholds. Internal circuitry provides an under-voltage lockout function by holding the output LOW until the supply voltage is within the operating range. In addition, the drivers feature matched internal propagation delays between A and B channels for applications requiring dual gate drives with critical timing, such as synchronous rectifiers. This also enables connecting two drivers in parallel to effectively double the current capability driving a single MOSFET.The FAN3216/17 drivers incorporate MillerDriveH architecture for the final output stage. This bipolar-MOSFET combination provides high current during the Miller plateau stage of the MOSFET turn-on / turn-off process to minimize switching loss, while providing rail-to-rail voltage swing and reverse current capability.The FAN3216 offers two inverting drivers and the FAN3217 offers two non-inverting drivers. Both are offered in a standard 8-pin SOIC package.

The FAN3216 and FAN3217 dual 2A gate drivers are designed to drive N-channel enhancement-mode MOSFETs in low-side switching applications by providing high peak current pulses during the short switching intervals. They are both available with TTL input thresholds. Internal circuitry provides an under-voltage lockout function by holding the output LOW until the supply voltage is within the operating range. In addition, the drivers feature matched internal propagation delays between A and B channels for applications requiring dual gate drives with critical timing, such as synchronous rectifiers. This also enables connecting two drivers in parallel to effectively double the current capability driving a single MOSFET.The FAN3216/17 drivers incorporate MillerDriveH architecture for the final output stage. This bipolar-MOSFET combination provides high current during the Miller plateau stage of the MOSFET turn-on / turn-off process to minimize switching loss, while providing rail-to-rail voltage swing and reverse current capability.The FAN3216 offers two inverting drivers and the FAN3217 offers two non-inverting drivers. Both are offered in a standard 8-pin SOIC package.

The FAN3223-25 family of dual 4A gate drivers is designed to drive N-channel enhancement-mode MOSFETs in low-side switching applications by providing high peak current pulses during the short switching intervals. The driver is available with either TTL or CMOS input thresholds. Internal circuitry provides an under-voltage lockout function by holding the output LOW until the supply voltage is within the operating range. In addition, the drivers feature matched internal propagation delays between A and B channels for applications requiring dual gate drives with critical timing, such as synchronous rectifiers. This also enables connecting two drivers in parallel to effectively double the current capability driving a single MOSFETS.The FAN322X drivers incorporate MillerDrive™ architecture for the final output stage. This bipolar-MOSFET combination provides high current during the Miller plateau stage of the MOSFET turn-on / turn-off process to minimize switching loss, while providing rail-to-rail voltage swing and reverse current capability.The FAN3223 offers two inverting drivers and the FAN3224 offers two non-inverting drivers. Each device has dual independent enable pins that default to ON if not connected. In the FAN3225, each channel has dual inputs of opposite polarity, which allows configuration as non-inverting or inverting with an optional enable function using the second input. If one or both inputs are left unconnected, internal resistors bias the inputs such that the output is pulled LOW to hold the power MOSFET OFF.

The FAN3223-25 family of dual 4 A gate drivers is designed to drive N-channel enhancement-mode MOSFETs in low-side switching applications by providing high peak current pulses during the short switching intervals. The driver is available with either TTL or CMOS input thresholds. Internal circuitry provides an under-voltage lockout function by holding the output LOW until the supply voltage is within the operating range. In addition, the drivers feature matched internal propagation delays between A and B channels for applications requiring dual gate drives with critical timing, such as synchronous rectifiers. This also enables connecting two drivers in parallel to effectively double the current capability driving a single MOSFET.The FAN322X drivers incorporate MillerDrive™ architecture for the final output stage. This bipolar-MOSFET combination provides high current during the Miller plateau stage of the MOSFET turn-on / turn-off process to minimize switching loss, while providing rail-to-rail voltage swing and reverse current capability.The FAN3223 offers two inverting drivers and the FAN3224 offers two non-inverting drivers. Each device has dual independent enable pins that default to ON if not connected. In the FAN3225, each channel has dual inputs of opposite polarity, which allows configuration as non-inverting or inverting with an optional enable function using the second input. If one or both inputs are left unconnected, internal resistors bias the inputs such that the output is pulled LOW to hold the power MOSFET OFF.The FAN3224TUM1X-F085 and FAN3224TM1X-F085 are proposed in a SO8 package with exposed pad, to improve heat dissipation for fast switching application such as On Board Charger in EV/HEV.

The FAN3223-25 family of dual 4A gate drivers is designed to drive N-channel enhancement-mode MOSFETs in low-side switching applications by providing high peak current pulses during the short switching intervals. The driver is available with either TTL or CMOS input thresholds. Internal circuitry provides an under-voltage lockout function by holding the output LOW until the supply voltage is within the operating range. In addition, the drivers feature matched internal propagation delays between A and B channels for applications requiring dual gate drives with critical timing, such as synchronous rectifiers. This also enables connecting two drivers in parallel to effectively double the current capability driving a single MOSFETS.The FAN322X drivers incorporate MillerDrive™ architecture for the final output stage. This bipolar-MOSFET combination provides high current during the Miller plateau stage of the MOSFET turn-on / turn-off process to minimize switching loss, while providing rail-to-rail voltage swing and reverse current capability.The FAN3223 offers two inverting drivers and the FAN3224 offers two non-inverting drivers. Each device has dual independent enable pins that default to ON if not connected. In the FAN3225, each channel has dual inputs of opposite polarity, which allows configuration as non-inverting or inverting with an optional enable function using the second input. If one or both inputs are left unconnected, internal resistors bias the inputs such that the output is pulled LOW to hold the power MOSFET OFF.