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Microchip Technology
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
Microchip Technology | Crystals Oscillators Resonators | CMOS OUTPUT CLOCK OSCILLATOR, 24MHZ NOM |
Microchip Technology | Crystals Oscillators Resonators | MEMS OSC |
Microchip Technology | Integrated Circuits (ICs) | 1GHZ ARM CORTEX A7 W/ MIPI CAMERA AND 2GB INTEGRATED DDR3L |
Microchip Technology | Discrete Semiconductor Products | DIODE GEN PURP 100V 12A DO203AA |
Microchip Technology MSMBJ5372BLTB | Circuit Protection | VOLTAGE REGULATOR |
Microchip Technology | Integrated Circuits (ICs) | OPERATIONAL AMPLIFIER, 1 CHANNELS, 10 MHZ, 15 V/ΜS, 2.2V TO 5.5V, SOT-23, 5 PINS |
Microchip Technology LE9531CMQCTObsolete | Integrated Circuits (ICs) | IC TELECOM INTERFACE 28QFN |
Microchip Technology MCP2021-330E/MD-AE2VAOObsolete | Integrated Circuits (ICs) | IC TRANSCEIVER |
Microchip Technology | Integrated Circuits (ICs) | MCU 8-BIT PIC16 PIC RISC 3.5KB FLASH 3.3V/5V 18-PIN SOIC W TUBE |
Microchip Technology VCC6-LCF-212M500000Obsolete | Crystals Oscillators Resonators | DIFFERENTIAL XO +3.3 VDC +/-5% L |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
JANTX2N3498L-TransistorMIL-PRF-19500/366 | Bipolar (BJT) | 3 | Active | This family of 2N3498 through 2N3501 epitaxial planar NPN transistors are military qualified up to a JANS level for high-reliability applications. These transistors are available in a TO-205AD (TO-39) ,no suffix, a TO-205AA (TO-5), L suffix and low profile surfacemount U4 and UB packaging. Microchip also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both throughhole and surface-mount packages. |
JANTX2N3507AL-TransistorNPN Silicon Switching 40V to 50V, 3A | Bipolar (BJT) | 7 | Active | This specification covers the performance requirements for NPN, silicon, switching 2N3506 and 2N3507 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/349. Two levels of product assurance are provided for each unencapsulated die (JANHC and JANKC). Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. The device package for the encapsulated device type are as follows: Similar to TO-39 and surface mount version U4. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/349. |
JANTX2N3585-TransistorNPN Silicon High-Power 250V to 300V, 2A | Single Bipolar Transistors | 1 | Active | This specification covers the performance requirements for NPN, silicon, power, 2N3584 and 2N3585 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for this device type as specified in MIL-PRF-19500/384. The device package for the encapsulated device type are as follows: (TO-66). |
JANTX2N3634UB-TransistorPNP Silicon Amplifier -140V, -1A | Bipolar (BJT) | 1 | Active | This specification covers the performance requirements for PNP, silicon, radiation hardened, low-power amplifier, and switching 2N3634 through 2N3637 transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/357 and two levels of product assurance are provided for unencapsulated die (JANHC and JANKC). |
JANTX2N3636-TransistorPNP Silicon Amplifier -140V, -1A | Bipolar (BJT) | 1 | Active | This specification covers the performance requirements for PNP, silicon, radiation hardened, low-power amplifier, and switching 2N3634 through 2N3637 transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/357 and two levels of product assurance are provided for unencapsulated die (JANHC and JANKC). |
JANTX2N3636UB-TransistorPNP Silicon Amplifier -140V, -1A | Transistors | 5 | Active | This specification covers the performance requirements for PNP, silicon, radiation hardened, low-power amplifier, and switching 2N3634 through 2N3637 transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/357 and two levels of product assurance are provided for unencapsulated die (JANHC and JANKC). The device package for the encapsulated device type are as follows: TO-5 and TO-39 and surface mount. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/357. |
JANTX2N3715-TransistorNPN Silicon High-Power 60V to 80V, 10A | Bipolar (BJT) | 1 | Active | This specification covers the performance requirements for NPN, silicon, high-power 2N3715 and 2N3716 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/408. |
JANTX2N3716-TransistorNPN Silicon High-Power 60V to 80V, 10A | Discrete Semiconductor Products | 2 | Active | This specification covers the performance requirements for NPN, silicon, high-power 2N3715 and 2N3716 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/408. The device package outline is a TO–204AA (formerly TO–3). |
JANTX2N3749-TransistorMIL-PRF-19500/315 | Transistors | 1 | Unknown | This 2N3749 silicon NPN transistor is rated at 5 amps and is military qualified up to the JANS level for high-reliability applications. This transistor is available in a TO-111 isolated package which features a 180 degree lead orientation. |
JANTX2N3767-TransistorNPN Silicon Power 60V to 80V, 4A | Bipolar (BJT) | 1 | Active | This specification covers the performance requirements for NPN silicon, power, 2N3766 and 2N3767 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/518. The device package outline is a TO-213AA. |