| Bridge Rectifiers | 1 | Active | * Rectifier Si diode
* High blocking voltage
* High surge current
* Low leakage current
* Low stray inductance
* Low losses
* Direct mounting to heatsink (isolated package)
* Low junction to case thermal resistance
* RoHS Compliant |
| Diodes | 1 | Active | * Rectifier Si diode
* High blocking voltage
* High surge current
* Low leakage current
* Low stray inductance
* Low losses
* Direct mounting to heatsink (isolated package)
* Low junction to case thermal resistance
* RoHS Compliant |
| Diode Arrays | 1 | Active | • FRED Si diode
• Fast recovery times
• Soft recovery characteristics
• High blocking voltage
• High current
• Low leakage current
• M6 power connectors
• Aluminum Nitride (AlN) substrate for improved thermal performance
• Low stray inductance
• Direct mounting to heatsink (isolated package)
• Low junction-to-case thermal resistance
• RoHS Compliant |
| Discrete Semiconductor Products | 1 | Active | • FRED Si diode
• Fast recovery times
• Soft recovery characteristics
• High blocking voltage
• High current
• Low leakage current
• M6 power connectors
• Aluminum Nitride (AlN) substrate for improved thermal performance
• Low stray inductance
• Direct mounting to heatsink (isolated package)
• Low junction-to-case thermal resistance
• RoHS Compliant |
| Discrete Semiconductor Products | 1 | Active | • FRED Si diode
• Fast recovery times
• Soft recovery characteristics
• High blocking voltage
• High current
• Low leakage current
• M6 power connectors
• Aluminum Nitride (AlN) substrate for improved thermal performance
• Low stray inductance
• Direct mounting to heatsink (isolated package)
• Low junction-to-case thermal resistance
• RoHS Compliant |
| Diodes | 1 | Active | • FRED Si diode
• Fast recovery times
• Soft recovery characteristics
• High blocking voltage
• High current
• Low leakage current
• M6 power connectors
• Aluminum Nitride (AlN) substrate for improved thermal performance
• Low stray inductance
• Direct mounting to heatsink (isolated package)
• Low junction-to-case thermal resistance
• RoHS Compliant |
| Discrete Semiconductor Products | 1 | Active | • FRED Si diode
• Fast recovery times
• Soft recovery characteristics
• High blocking voltage
• High current
• Low leakage current
• M6 power connectors
• Aluminum Nitride (AlN) substrate for improved thermal performance
• Low stray inductance
• Direct mounting to heatsink (isolated package)
• Low junction-to-case thermal resistance
• RoHS Compliant |
| IGBTs | 2 | Active | * IGBT 4
* Very Low voltage drop
* Low tail current
* Low leakage current
* Kelvin emitter for easy drive
* Low stray inductance
* High level of integration
* Stable temperature behavior
* Very rugged
* Direct mounting to heatsink (isolated package)
* Low junction to case thermal resistance
* Internal thermistor for temperature monitoring (optional)
* Easy paralleling due to positive TC of VCEsat
* Low profile
* RoHS Compliant |
| IGBT Modules | 1 | Active | * IGBT 4
* Very Low voltage drop
* Low tail current
* Low leakage current
* Kelvin emitter for easy drive
* Low stray inductance
* High level of integration
* Stable temperature behavior
* Very rugged
* Direct mounting to heatsink (isolated package)
* Low junction to case thermal resistance
* Internal thermistor for temperature monitoring (optional)
* Easy paralleling due to positive TC of VCEsat
* Low profile
* RoHS Compliant |
| Transistors | 1 | Active | * IGBT 4
* Very Low voltage drop
* Low tail current
* Low leakage current
* Kelvin emitter for easy drive
* Low stray inductance
* High level of integration
* Stable temperature behavior
* Very rugged
* Direct mounting to heatsink (isolated package)
* Low junction to case thermal resistance
* Internal thermistor for temperature monitoring (optional)
* Easy paralleling due to positive TC of VCEsat
* Low profile
* RoHS Compliant |