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Microchip Technology
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
Beta
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| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
Microchip Technology | Crystals Oscillators Resonators | CMOS OUTPUT CLOCK OSCILLATOR, 24MHZ NOM |
 Microchip Technology | Crystals Oscillators Resonators | MEMS OSC |
 Microchip Technology | Integrated Circuits (ICs) | 1GHZ ARM CORTEX A7 W/ MIPI CAMERA AND 2GB INTEGRATED DDR3L |
 Microchip Technology | Discrete Semiconductor Products | DIODE GEN PURP 100V 12A DO203AA |
 Microchip Technology MSMBJ5372BLTB | Circuit Protection | VOLTAGE REGULATOR |
 Microchip Technology | Integrated Circuits (ICs) | OPERATIONAL AMPLIFIER, 1 CHANNELS, 10 MHZ, 15 V/ΜS, 2.2V TO 5.5V, SOT-23, 5 PINS |
Microchip Technology LE9531CMQCTObsolete | Integrated Circuits (ICs) | IC TELECOM INTERFACE 28QFN |
 Microchip Technology MCP2021-330E/MD-AE2VAOObsolete | Integrated Circuits (ICs) | IC TRANSCEIVER |
 Microchip Technology | Integrated Circuits (ICs) | MCU 8-BIT PIC16 PIC RISC 3.5KB FLASH 3.3V/5V 18-PIN SOIC W TUBE |
Microchip Technology VCC6-LCF-212M500000Obsolete | Crystals Oscillators Resonators | DIFFERENTIAL XO +3.3 VDC +/-5% L |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Single Bipolar Transistors | 1 | Active | ||
| Transistors | 1 | Active | ||
2N6277-TransistorMIL-PRF-19500/514 | Bipolar (BJT) | 1 | Active | This specification covers the performance requirements for NPN silicon, power, 2N6274 and 2N6277 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device as specified in MIL-PRF-19500/514. The device package outlines are as follows: TO-3 for all device types. |
| Discrete Semiconductor Products | 1 | Active | ||
| Bipolar (BJT) | 1 | Active | ||
2N6286-DarlingtonMIL-PRF-19500/505 | Bipolar (BJT) | 1 | Active | This specification covers the performance requirements for PNP, Darlington, power, 2N6286 and 2N6287 transistors for use in particular power-switching applications. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device type as specified in MIL-PRF-19500/505. The device package outlines are as follows: similar to TO-3 for all encapsulated device types. |
2N6287-DarlingtonMIL-PRF-19500/505 | Single Bipolar Transistors | 1 | Active | This specification covers the performance requirements for PNP, Darlington, power, 2N6286 and 2N6287 transistors for use in particular power-switching applications. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device type as specified in MIL-PRF-19500/505. The device package outlines are as follows: similar to TO-3 for all encapsulated device types. |
| Transistors | 1 | Active | ||
| Single Bipolar Transistors | 1 | Active | ||
| Single Bipolar Transistors | 1 | Active | This 2N6303 power PNP transistor is produced by a PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200°C permits reliable operation in high ambientes, and the hermetically sealed package insures maximum reliability and long life. | |