2N6303-Transistor Series

Catalog

POWER BJT TO-5 ROHS COMPLIANT: YES

Part	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Package / Case	Transistor Type	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type
Microchip Technology 2N6303	60 MHz	750 mV	1 µA	1 W	3 A	TO-205AA TO-5-3 Metal Can	PNP	TO-5AA	80 V	Through Hole

Catalog

Key Features

- High-Speed Switching

- Medium-Current Switching

- High-Frequency Amplifiers

- Collector-Emitter Sustaining Voltage: VCEO(sus) = - 80 Vdc (Min)

- DC Current Gain: hFE = 30-150 @ IC = 1.5 Adc

- Low Collector-Emitter Saturation Voltage: VCE(sat) = - 0.75 Vdc @ IC = 1.5 Adc

- High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ).

Description

This 2N6303 power PNP transistor is produced by a PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200°C permits reliable operation in high ambientes, and the hermetically sealed package insures maximum reliability and long life.