Microchip Technology

This specification covers the performance requirements for NPN silicon, power, 2N3766 and 2N3767 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/518. The device package outline is a TO-213AA.

This specification covers the performance requirements for NPN silicon, high-power 2N3771 and 2N3772 transistors for use in high-speed power-switching applications. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/413. The device package outline for this specification sheet is a TO-204AA (formerly TO-3) for all encapsulated device types.

This specification covers the performance requirements for two electrically isolated, matched PNP, radiation hardened, silicon 2N3810, and 2N3811 Unitized, transistors as one dual unit for use in particular switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS), are provided for each encapsulated device type as specified in MIL-PRF-19500/336 and two levels of product assurance are provided for each unencapsulated die (JANHC and JANKC). The device package outlines are as follows: TO-78 and U for all encapsulated device types. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/336.

This specification covers the performance requirements for NPN silicon, switching 2N3960 and 2N3960UB transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type and two levels for unencapsulated die as specified in MIL-PRF-19500/399. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements. The device packages for the encapsulated device types are as follows: (2N3960) (TO-18) and surfacemount (UB). The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/399.

This specification covers the performance requirements for NPN silicon, power 2N3996 through 2N3999 transistors for use in high-speed power switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/374. Two levels of product assurance (JANHC and JANKC) are provided for the unencapsulated die. The device package outlines for the encapsulated device types are as follows: 4 terminal stud (TO-111) package for types 2N3996 and 2N3997 and 3 terminal stud (TO-111) package for types 2N3998 and 2N3999.

This specification covers the performance requirements for NPN silicon, power 2N3996 through 2N3999 transistors for use in high-speed power switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/374. Two levels of product assurance (JANHC and JANKC) are provided for the unencapsulated die. The device package outlines for the encapsulated device types are as follows: 4 terminal stud (TO-111) package for types 2N3996 and 2N3997 and 3 terminal stud (TO-111) package for types 2N3998 and 2N3999.

This specification covers the performance requirements for PNP silicon, 2N4029 and 2N4033 transistors for use in high speed switching and driver applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/512 and two levels of product assurance (JANHC and JANKC) for each unencapsulated device type. Provisions for radiation hardness assurance (RHA), eight radiation levels is provided for JANTXV and JANS product assurance levels. RHA level designators "M", "D", P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. The device package for the encapsulated device types are as follows: TO-18, TO-39, and surface mount UA and UB. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/512.

This specification covers the performance requirements for N-channel, junction, silicon field-effect, 2N4091, 2N4092 and 2N4093 transistors intended for use in chopper and analog gate circuit applications. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/431. The device packages for the encapsulated device types are as follows: (similar to TO-18) and surface mount LCC3 (UB). These devices are test to 19500 specifications with added prefix MQ - equivalent to JAN, MX - equivalent to JANX and MV equivalent to JANTX

This specification covers the performance requirements for N-channel, junction, silicon field-effect, 2N4091, 2N4092 and 2N4093 transistors intended for use in chopper and analog gate circuit applications. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/431. The device packages for the encapsulated device types are as follows: (similar to TO-18) and surface mount LCC3 (UB). These devices are test to 19500 specifications with added prefix MQ - equivalent to JAN, MX - equivalent to JANX and MV - equivalent to JANTX.