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Microchip Technology
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
Microchip Technology | Crystals Oscillators Resonators | CMOS OUTPUT CLOCK OSCILLATOR, 24MHZ NOM |
Microchip Technology | Crystals Oscillators Resonators | MEMS OSC |
Microchip Technology | Integrated Circuits (ICs) | 1GHZ ARM CORTEX A7 W/ MIPI CAMERA AND 2GB INTEGRATED DDR3L |
Microchip Technology | Discrete Semiconductor Products | DIODE GEN PURP 100V 12A DO203AA |
Microchip Technology MSMBJ5372BLTB | Circuit Protection | VOLTAGE REGULATOR |
Microchip Technology | Integrated Circuits (ICs) | OPERATIONAL AMPLIFIER, 1 CHANNELS, 10 MHZ, 15 V/ΜS, 2.2V TO 5.5V, SOT-23, 5 PINS |
Microchip Technology LE9531CMQCTObsolete | Integrated Circuits (ICs) | IC TELECOM INTERFACE 28QFN |
Microchip Technology MCP2021-330E/MD-AE2VAOObsolete | Integrated Circuits (ICs) | IC TRANSCEIVER |
Microchip Technology | Integrated Circuits (ICs) | MCU 8-BIT PIC16 PIC RISC 3.5KB FLASH 3.3V/5V 18-PIN SOIC W TUBE |
Microchip Technology VCC6-LCF-212M500000Obsolete | Crystals Oscillators Resonators | DIFFERENTIAL XO +3.3 VDC +/-5% L |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
MV71000-GaAs-FrequencyMultiplierGaAs-Frequency-Multiplier | Discrete Semiconductor Products | 1 | Active | GaAs-Frequency-Multiplier |
MVR2N2222AUA-TransistorNPN Silicon Switching 50V, 0.8A | Discrete Semiconductor Products | 1 | Active | This specification covers the performance requirements for NPN, silicon, switching 2N2221 and 2N2222 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/255 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. RHA level designators "E", "K", "U", "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. |
MVR2N2222AUB-TransistorNPN Silicon Switching 50V, 0.8A | Transistors | 1 | Active | This specification covers the performance requirements for NPN, silicon, switching 2N2221 and 2N2222 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/255 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. RHA level designators "E", "K", "U", "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. |
MVR2N2222AUBC-TransistorNPN Silicon Switching 50V, 0.8A | Bipolar (BJT) | 1 | Active | This specification covers the performance requirements for NPN, silicon, switching 2N2221 and 2N2222 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/255 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. RHA level designators "E", "K", "U", "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. |
| RF Misc ICs and Modules | 1 | Active | ||
MX1DS10P-Prescaler15 GHz Ultra-Variable, Prescaler featuring variable Divide Ratios. | RF Misc ICs and Modules | 1 | Unknown | The MX1DS10P is a 15 GHz Ultra-Variable, Prescaler featuring variable Divide Ratios: 2 to 220, high input sensitivity, small size, 6mm x 6mm, and low SSB Phase Noise: 153 dBc @ 10 kHz.The MX1DS10P is ideal for phase locked loops and other synthesizers requiring large and variable divide ratios. Other applications include trigger generation for high-speed measurement systems. The MX1DS10P can be employed in high frequency phase locked loops that can take advantage of the low 1/f noise of SiGe HBT’s. General purpose test instrumentation systems will also benefit from the high input sensitivity and broad frequency range. |
MX1DS10PE-Prescaler-Eval-BoardThe MX1DS10PE is the EVB for the MX1DS10P | Development Boards, Kits, Programmers | 1 | Unknown | The MX1DS10PE is the EVB for the MX1DS10P |
MX2N4091-JFET-NChannelField Effect Transistor FET N-Channel Silicon 40V | Discrete Semiconductor Products | 1 | Active | This specification covers the performance requirements for N-channel, junction, silicon field-effect, 2N4091, 2N4092 and 2N4093 transistors intended for use in chopper and analog gate circuit applications. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/431. |
MX2N4092-JFET-NChannelField Effect Transistor FET N-Channel Silicon 40V | JFETs | 1 | Active | This specification covers the performance requirements for N-channel, junction, silicon field-effect, 2N4091, 2N4092 and 2N4093 transistors intended for use in chopper and analog gate circuit applications. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/431. |
MX2N4093-JFET-NChannelField Effect Transistor FET N-Channel Silicon 40V | JFETs | 1 | Active | This specification covers the performance requirements for N-channel, junction, silicon field-effect, 2N4091, 2N4092 and 2N4093 transistors intended for use in chopper and analog gate circuit applications. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/431. |