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Microchip Technology

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(31808)

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Part	Category	Description
Microchip Technology VCC1-B2D-24M0000000	Crystals Oscillators Resonators	CMOS OUTPUT CLOCK OSCILLATOR, 24MHZ NOM
Microchip Technology DSC1003CI2-033.0000T	Crystals Oscillators Resonators	MEMS OSC
Microchip Technology SAMA7G54D2GT-I/4UB	Integrated Circuits (ICs)	1GHZ ARM CORTEX A7 W/ MIPI CAMERA AND 2GB INTEGRATED DDR3L
Microchip Technology JANTXV1N3890R	Discrete Semiconductor Products	DIODE GEN PURP 100V 12A DO203AA
Microchip Technology MSMBJ5372BLTB	Circuit Protection	VOLTAGE REGULATOR
Microchip Technology MCP60711T-E/OT	Integrated Circuits (ICs)	OPERATIONAL AMPLIFIER, 1 CHANNELS, 10 MHZ, 15 V/ΜS, 2.2V TO 5.5V, SOT-23, 5 PINS
Microchip Technology LE9531CMQCTObsolete	Integrated Circuits (ICs)	IC TELECOM INTERFACE 28QFN
Microchip Technology MCP2021-330E/MD-AE2VAOObsolete	Integrated Circuits (ICs)	IC TRANSCEIVER
Microchip Technology PIC16F628-20E/SO	Integrated Circuits (ICs)	MCU 8-BIT PIC16 PIC RISC 3.5KB FLASH 3.3V/5V 18-PIN SOIC W TUBE
Microchip Technology VCC6-LCF-212M500000Obsolete	Crystals Oscillators Resonators	DIFFERENTIAL XO +3.3 VDC +/-5% L

Series	Category	# Parts	Status	Description

MPT-361500 watt Low Clamping Factor Transient Voltage Suppressor	Transient Voltage Suppressors (TVS)	1	Active	This Transient Voltage Suppressor (TVS) series for 1N6356 thru 1N6372 are JEDEC registered selections for both unidirectional and bidirectional devices. The 1N6356 thru 1N6364 are unidirectional and the 1N6365 thru 1N6372 are bi-directional where they all provide a very low specified clamping factor for minimal clamping voltages (VC) above their respective breakdown voltages (VBR) as specified herein. They are most often used in protecting sensitive components from inductive switching transients or induced secondary lightning effects as found in lower surge levels of IEC61000-4-5 . They are also very successful in protecting airborne avionics and electrical systems. Since their response time is virtually instantaneous, they can also protect from ESD and EFT per IEC61000-4-2 and IEC61000-4-4.
MPT-451500 watt Low Clamping Factor Transient Voltage Suppressor	TVS Diodes	1	Active	This Transient Voltage Suppressor (TVS) series for 1N6356 thru 1N6372 are JEDEC registered selections for both unidirectional and bidirectional devices. The 1N6356 thru 1N6364 are unidirectional and the 1N6365 thru 1N6372 are bi-directional where they all provide a very low specified clamping factor for minimal clamping voltages (VC) above their respective breakdown voltages (VBR) as specified herein. They are most often used in protecting sensitive components from inductive switching transients or induced secondary lightning effects as found in lower surge levels of IEC61000-4-5 . They are also very successful in protecting airborne avionics and electrical systems. Since their response time is virtually instantaneous, they can also protect from ESD and EFT per IEC61000-4-2 and IEC61000-4-4.
MPV1900-MMSM-SMT-VaractorMMSM-Surface-Mount-Varactor	Diodes	5	Active	The MPV series of surface mount varactor diodes utilize a unique new monolithic fabrication technology. This technology employs package / device integration accomplished at the wafer fabrication level. Since the cathode and anode interconnections utilize precision photolithographic techniques rather than wire bonds, parasitic package inductance is minimized and tightly controlled. The package parasitics provide smooth non-resonant functionality through 8 GHz. These devices are available in tap on reel format as well as in expanded sawed wafers on Mylar film frames for low cost automatic insertion. The series of diodes meets RoHS requirements per EU Directive 2002/95/EC.
MQ2N4091-JFET-NChannelField Effect Transistor FET N-Channel Silicon 40V	Transistors	1	Active	This specification covers the performance requirements for N-channel, junction, silicon field-effect, 2N4091, 2N4092 and 2N4093 transistors intended for use in chopper and analog gate circuit applications. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/431.
MQ2N4092-JFET-NChannelField Effect Transistor FET N-Channel Silicon 40V	Discrete Semiconductor Products	1	Active	This specification covers the performance requirements for N-channel, junction, silicon field-effect, 2N4091, 2N4092 and 2N4093 transistors intended for use in chopper and analog gate circuit applications. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/431.
MQ2N4093-JFET-NChannelField Effect Transistor FET N-Channel Silicon 40V	Transistors	1	Active	This specification covers the performance requirements for N-channel, junction, silicon field-effect, 2N4091, 2N4092 and 2N4093 transistors intended for use in chopper and analog gate circuit applications. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/431.
MQ2N4857UB-JFET-NChannelJ-FET N-Channel Depletion Mode 30V to 40V, 0.08A to 0.175A	Discrete Semiconductor Products	2	Active	This specification covers the performance requirements for N-channel, depletion mode, silicon 2N4856 through 2N4861 J-FET (Junction Field Effect transistor). Four levels of product assurance are provided for each device (JAN, JANTX, JANTXV, and JANS) as specified in MIL-PRF-19500/385. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.
MQ2N4858-JFET-NChannelJ-FET N-Channel Depletion Mode 30V to 40V, 0.08A to 0.175A	Discrete Semiconductor Products	1	Active	This specification covers the performance requirements for N-channel, depletion mode, silicon 2N4856 through 2N4861 J-FET (Junction Field Effect transistor). Four levels of product assurance are provided for each device (JAN, JANTX, JANTXV, and JANS) as specified in MIL-PRF-19500/385. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.
MQ2N4858UB-JFET-NChannelJ-FET N-Channel Depletion Mode 30V to 40V, 0.08A to 0.175A	JFETs	1	Active	This specification covers the performance requirements for N-channel, depletion mode, silicon 2N4856 through 2N4861 J-FET (Junction Field Effect transistor). Four levels of product assurance are provided for each device (JAN, JANTX, JANTXV, and JANS) as specified in MIL-PRF-19500/385. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.
MQ2N4860UB-JFET-NChannelJ-FET N-Channel Depletion Mode 30V to 40V, 0.08A to 0.175A	Discrete Semiconductor Products	2	Active	This specification covers the performance requirements for N-channel, depletion mode, silicon 2N4856 through 2N4861 J-FET (Junction Field Effect transistor). Four levels of product assurance are provided for each device (JAN, JANTX, JANTXV, and JANS) as specified in MIL-PRF-19500/385. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.