Littelfuse/Commercial Vehicle Products

Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters.

Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters.

The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conduction and switching loss of the device. Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTM process, yielding a device with a fast intrinsic rectifier which provides for low reverse recovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device. Advantages: Easy to Mount High Power Density Space savings

Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings

The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on), low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings

The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings

The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings

Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings

Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings