Analog Devices Inc./Maxim Integrated

The HMC8410 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz. The HMC8410 provides a typical gain of 19.5 dB, a 1.1 dB typical noise figure, and a typical output IP3 of 33 dBm, requiring only 65 mA from a 5 V supply voltage. The saturated output power (PSAT)of up to 22.5 dBm enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, I/Q or image rejection mixers.The HMC8410 also features inputs/outputs (I/Os) that are internally matched to 50 Ω, making it ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications.The HMC8410 is housed in a RoHS-compliant, 2 mm × 2 mm, LFCSP package.Multifunction pin names can be referenced by their relevant function only.ApplicationsSoftware defined radiosElectronics warfareRadar applications

The HMC8411LP2FE is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz.The HMC8411LP2FE provides a typical gain of 15.5 dB, a 1.7 dB typical noise figure, and a typical output third-order intercept (OIP3) of 34 dBm, requiring only 55 mA from a 5 V supply voltage. The saturated output power (PSAT) of 19.5 dBm typical enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, in-phase/quadrature (I/Q), or image rejection mixers.The HMC8411LP2FE also features inputs and outputs that are internally matched to 50 Ω, making the device ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications.The HMC8411LP2FE is housed in a RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP.Multifunction pin names may be referenced by their relevant function only.ApplicationsTest instrumentationMilitary communications

The HMC8412 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.4 GHz to 11 GHz.The HMC8412 provides a typical gain of 15.5 dB, a 1.4 dB typical noise figure, and a typical output third-order intercept (OIP3) of ≤33 dBm, requiring only 60 mA from a 5 V drain supply voltage. The saturated output power (PSAT) of ≤20.5 dBm typical enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many Analog Devices, Inc., balanced, inphase and quadrature (I/Q) or image rejection mixers.The HMC8412 also features inputs and outputs that are internally matched to 50 Ω, making the device ideal for surface-mount technology (SMT)-based, high capacity microwave radio applications.The HMC8412 is housed in an RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP.ApplicationsTest instrumentationTelecommunicationsMilitary radar and communicationElectronic warfareAerospace

For more information on the HMC8413LP2FETR-CSL, please refer to the corresponding data sheet.The HMC8413 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 9 GHz.The HMC8413 provides a typical gain of 19.5 dB, a 1.9 dB typical noise figure, and a typical output third-order intercept (OIP3) of 35 dBm at 0.01 GHz to 7 GHz, requiring only 95 mA from a 5 V supply voltage. The saturated output power (PSAT) of 22 dBm typical at 0.01 GHz to 7 GHz enables the low noise amplifier to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, in-phase/quadrature (I/Q) or image rejection mixers.The HMC8413 also features inputs and outputs that are internally matched to 50 Ω, making the device ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications.The HMC8413 is housed in an RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP.APPLICATIONSTest instrumentationMilitary communicationsMilitary radarTelecommunications

The HMC8414 is a low noise wideband amplifier with a bypass switch that operates from 0.1 GHz to 10 GHz. The integrated bypass switch enables high dynamic range systems with large receive path signal variation. In the bypass path, typical insertion loss and input third-order intercept (IIP3) are 1.5 dB and 49.4 dBm, respectively.The HMC8414 features inputs and outputs that are internally matched to 50 Ω over the full operating range of the device. The single positive supply voltage can range from 3 V to 6 V. The bias current is set by a resistor connected between the RBIAS pin and VDD pins (RFOUT/VDD1 and VDD2), and can be varied around its nominal value of 90 mA.The HMC8414 is fabricated on a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) process. It is housed in an RoHS-compliant, 3 mm × 3 mm, LFCSP package and is specified for operation from −40°C to +85°C.ApplicationsTest and measurement equipmentWideband high dynamic range receivers

The HMC8415LP6GE is a gallium nitride (GaN), power amplifier, delivering 40 W (46 dBm) with more than 37.5% power added efficiency (PAE) across a bandwidth of 9 GHz to 10.5 GHz.The HMC8415LP6GE is ideal for pulsed applications, such as wireless weather, marine, and military radar applications.APPLICATIONSWeather radarsMarine radarsMilitary radars

The HMC843LC4B is an AND/NAND/OR/NOR function designed to support data transmission rates of up to 45 Gbps, and clock frequencies as high as 25 GHz. The HMC843LC4B may be easily confi gured to provide any of the following logic functions: AND, NAND, OR and NOR. The HMC843LC4B also features an output level control pin, VAC, which allows for loss compensation or for signal level optimization.All input signals to the HMC843LC4B are terminated with 50 Ohms to ground on-chip, and may be either AC or DC coupled. The differential outputs of the HMC843LC4B may be either AC or DC coupled. Outputs can be connected directly to a 50 Ohms-to-ground terminated system, while DC blocking capacitors should be used if the terminating system is 50 Ohms to a non-ground DC voltage. The HMC843LC4B operates from a single -3.3V DC supply, and is available in a ceramic RoHS compliant 4x4 mm SMT package.ApplicationsRF ATE ApplicationsBroadband Test & MeasurementSerial Data Transmission up to 45 GbpsDigital Logic Systems up to 25 GHzNRZ-to-RZ Conversion