HMC454½ Watt High IP3 Amplifier SMT, 0.4 - 2.5 GHz | RF, RFID, Wireless Evaluation Boards | 6 | Active | The HMC454ST89(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1⁄2 watt MMIC amplifier operating between 0.4 and 2.5 GHz. Packaged in a low cost industry standard SOT89, the amplifier gain is typically 17.8 dB from 0.8 to 1.0 GHz and 12.5 dB from 1.8 to 2.2 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +40 dBm at 0.9 GHz or +42 dBm at 2.0 GHz. The high output IP3 and PAE makes the HMC454ST89(E) an ideal driver amplifier for Cellular/PCS/3G, WLL, ISM and Fixed Wireless applications.ApplicationsGSM, GPRS & EDGECDMA & W-CDMACATV/Cable ModemFixed Wireless & WLL |
HMC455½ Watt High IP3 Amplifier SMT, 1.7 - 2.5 GHz | RF Amplifiers | 2 | LTB | The HMC455LP3(E) is a high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1⁄2 watt MMIC amplifier operating between 1.7 and 2.5 GHz. Utilizing a minimum number of external components the amplifier provides 13 dB of gain and +28 dBm of saturated power at 56% PAE from a single +5 Vdc supply voltage. The high output IP3 of +42 dBm coupled with the low VSWR of 1.4:1 make the HMC455LP3(E) ideal driver amplifier for PCS/3G wireless infrastructures. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the linear amplifier. The LP3 provides an exposed base for excellent RF and thermal performance.ApplicationsMulti-Carrier SystemsGSM, GPRS & EDGECDMA & WCDMAPHS |
HMC4571 Watt Power Amplifier SMT, 1.7 - 2.2 GHz | RF, RFID, Wireless Evaluation Boards | 6 | Active | The HMC457QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 1.7 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB from 2.0 to 2.2 GHz. Utilizing a minimum number of external components, the amplifier output IP3 can be optimized to +45 dBm. The power control (Vpd) can be used for full power down or RF output power/ current control. The high output IP3 and PAE make the HMC457QS16G(E) ideal power amplifier for Cellular/3G base station & repeater applications.ApplicationsCDMA & W-CDMAGSM, GPRS & EdgeBase Stations & Repeaters |
HMC459-DIEWideband Power Amplifier Chip, DC - 18 GHz | RF and Wireless | 2 | Active | The HMC459 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 18 GHz. The amplifier provides 17 dB of gain, +31.5 dBm output IP3 and +25 dBm of output power at 1 dB gain compression while requiring 290 mA from a +8V supply. Gain flatness is good making the HMC459 ideal for EW, ECM and radar driver amplifier applications. The HMC459 amplifier I/O’s are internally matched to 50 Ohms facilitating easy integration into Multi-Chip-Modules (MCMs). All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).ApplicationsTelecom InfrastructureMicrowave Radio & VSATMilitary & SpaceTest Instrumentation |
| RF, RFID, Wireless Evaluation Boards | 1 | Active | |
| RF and Wireless | 2 | Active | |
HMC460LC5GaAs pHEMT MMIC Low Noise Amplifier, DC - 20 GHz | RF Amplifiers | 3 | Active | The HMC460LC5 is a GaAs MMIC pHEMT Low Noise Distributed Amplifier in a leadless 5 x 5 mm ceramic surface mount package which operates from DC to 20 GHz. The amplifier provides 14 dB of gain, 2.5 dB noise figure and +16.5 dBm of output power at 1 dB gain compression while requiring only 75 mA from a Vdd = 8V supply. Gain flatness is excellent from DC to 20 GHz making the HMC460LC5 ideal for EW, ECM, Radar and test equipment applications. The wideband amplifier I/Os are internally matched to 50 Ohms.ApplicationsTelecom InfrastructureMicrowave Radio & VSATMilitary & SpaceTest Instrumentation |
| RF Amplifiers | 2 | Active | |
HMC462Low Noise Amplifier Chip, 2 - 20 GHz | Evaluation Boards | 3 | Active | The HMC462 is a GaAs MMIC PHEMT Low Noise Distributed Amplifier die which operates between 2 and 20 GHz. The amplifier provides 15 dB of gain, 2.0 to 2.5 dB noise figure and +15 dBm of output power at 1 dB gain compression while requiring only 63 mA from a single +5V supply. Gain flatness is excellent at ±0.5 dB from 6 - 18 GHz making the HMC462 ideal for EW, ECM and RADAR applications.The HMC462 requires a single supply of +5V @ 63 mA and is the self-biased version of the HMC463. The wideband amplifier I/Os are internally matched to 50 Ohms facilitating easy integration into Multi-Chip-Modules (MCMs). All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).ApplicationsTelecom InfrastructureMicrowave Radio & VSATMilitary & SpaceTest InstrumentationFiber Optics |
| RF Amplifiers | 1 | Active | The HMC462 is a GaAs MMIC PHEMT Low Noise Distributed Amplifier die which operates between 2 and 20 GHz. The amplifier provides 15 dB of gain, 2.0 to 2.5 dB noise figure and +15 dBm of output power at 1 dB gain compression while requiring only 63 mA from a single +5V supply. Gain flatness is excellent at ±0.5 dB from 6 - 18 GHz making the HMC462 ideal for EW, ECM and RADAR applications.The HMC462 requires a single supply of +5V @ 63 mA and is the self-biased version of the HMC463. The wideband amplifier I/Os are internally matched to 50 Ohms facilitating easy integration into Multi-Chip-Modules (MCMs). All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).ApplicationsTelecom InfrastructureMicrowave Radio & VSATMilitary & SpaceTest InstrumentationFiber Optics |
