Analog Devices Inc./Maxim Integrated

The HMC-APH460 is a two stage GaAs HEMT MMIC 0.5 Watt Power Amplifier which operates between 27 and 31.5 GHz. The HMC-APH460 provides 14 dB of gain, and an output power of +28 dBm at 1 dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation.The HMC-APH460 GaAs HEMT MMIC 0.5 Watt Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.ApplicationsPoint-to-Point RadiosPoint-to-Multi-Point RadiosVSATMilitary & Space

The HMC-APH462 is a high dynamic range, two stage GaAs HEMT MMIC 1 Watt Power Amplifier which operates between 15 and 27 GHz. The HMC-APH462 provides 17 dB of gain, and an output power of +29 dBm at 1 dB compression from a +5 V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation.The HMC-APH462 GaAs HEMT MMIC 0.8 Watt Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.ApplicationsPoint-to-Point RadiosPoint-to-Multi-Point RadiosVSATMilitary & Space

The HMC-APH510 is a high dynamic range, three stage GaAs HEMT MMIC Medium Power Amplifier which operates between 37 and 40 GHz. The HMCAPH510 provides 20 dB of gain, and an output power of +26 dBm at 1 dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation.The HMC-APH510 GaAs HEMT MMIC Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.ApplicationsPoint-to-Point RadiosPoint-to-Multi-Point RadiosMilitary & Space

The HMC-APH608 is a high dynamic range, two stage GaAs HEMT MMIC 1 Watt Power Amplifier which operates between 22.5 and 26.5 GHz. The HMCAPH608 provides 17 dB of gain, and an output power of +30 dBm at 1 dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation.The HMC-APH608 GaAs HEMT MMIC 1 Watt Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.ApplicationsPoint-to-Point RadiosPoint-to-Multi-Point RadiosVSATMilitary & Space

The HMC-AUH232 is a GaAs MMIC HEMT Distributed Driver Amplifier die which operates between DC and 43 GHz and provides a typical 3 dB bandwidth of 46 GHz. The amplifier provides 12 dB of small signal gain while requiring only 180 mA from a +5V supply voltage. The HMC-AUH232 exhibits very good gain and phase ripple to 40 GHz, and can output up to 8V peak-to-peak with low jitter, making it ideal for for use in broadband wireless, fiber optic communication and test equipment applications.The amplifier die occupies less than 3.6 mm² which facilitates easy integration into Multi-Chip-Modules (MCMs). The HMC-AUH232 requires external bias-tee as well as off-chip blocking components and bypass capacitors for the DC supply lines. A gate voltage adjust, Vgg2 is provided for limited gain adjustment, while Vgg1 adjusts the bias current for the device.Applications40 Gb/s Lithium Niobate/Mach Zender Fiber Optic ModulatorsBroadband Gain Block for Test & Measurement EquipmentBroadband Gain Block for RF ApplicationsMilitary & Space

The HMC-AUH256 is a GaAs MMIC HEMT four stage Driver Amplifier which covers the frequency range of 17.5 to 41 GHz. The chip can easily be integrated into Multi-Chip-Modules (MCMs) due to its small (1.93 mm²) size. The HMC-AUH256 offers 21 dB of gain and +20 dBm output power at 1 dB compression from a bias supply of +5V @ 295 mA. The HMC-AUH256 may also be used as a frequency doubler. Detail bias condition to achieve doubler operation.ApplicationsPoint-to-Point RadiosPoint-to-Multi-Point RadiosVSATSATCOM

The HMC-AUH312 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), HEMT, low noise, wideband amplifier die that operates between 500 MHz and 80 GHz, providing a typical 3 dB bandwidth of 80 GHz. The amplifier provides 10 dB of small signal gain and a maximum output amplitude of 2.5 V p-p, which makes it ideal for use in broadband wireless, fiber optic communications, and test equipment applications.The amplifier die occupies 1.2 mm × 1.0 mm, facilitating easy integration into a multichip module (MCM). The HMC-AUH312 can be used with or without a bias tee, and requires off-chip blocking components and bypass capacitors for the dc supply lines. Adjustable gate voltages allow for gain adjustment.ApplicationsFiber optic modulator driversFiber optic photoreceiver postamplifiersLow noise amplifier for test and measurement equipmentPoint to point and point to multipoint radiosWideband communication and surveillance systemsRadar warning receivers

The HMC-AUH317 is a high dynamic range, three stage GaAs HEMT MMIC Medium Power Amplifier which operates between 81 and 86 GHz. The HMC-AUH317 provides 22 dB of gain, and an output power of +17.5 dBm at 1 dB compression from a +4V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation. The HMC-AUH317 GaAs HEMT MMIC Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.ApplicationsShort Haul / High Capacity LinksWireless LAN BridgesMilitary & SpaceE-Band Communication Systems