Analog Devices Inc./Maxim Integrated

The HMC-ALH444 is a GaAs MMIC HEMT Low Noise Wideband Amplifier die which operates between 1 and 12 GHz. The amplifier provides 17 dB of gain, 1.5 dB noise figure and +19 dBm of output power at 1 dB gain compression while requiring only 55 mA from a +5V supply voltage.ApplicationsWideband Communication SystemsSurveillance SystemsPoint-to-Point RadiosPoint-to-Multi-Point RadiosMilitary & SpaceTest InstrumentationVSAT

The HMC-ALH476 is a GaAs MMIC HEMT Low Noise Wideband Amplifier die which operates between 14 and 27 GHz. The amplifier provides 20 dB of gain, 2 dB noise figure and +14 dBm of output power at 1 dB gain compression while requiring only 90 mA from a +4V supply voltage. The HMC-ALH476 amplifier is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size.ApplicationsPoint-to-Point RadiosPoint-to-Multi-Point RadiosMilitary & SpaceTest Instrumentation

The HMC-ALH482 is a GaAs MMIC HEMT Low Noise Wideband Amplifier die which operates between 2 and 22 GHz. The amplifier provides 16 dB of gain, 1.7 dB noise figure up to 12 GHz and +14 dBm of output power at 1 dB gain compression while requiring only 45 mA from a +4V supply voltage. The HMC-ALH482 amplifier is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size.ApplicationsWideband Communication SystemsSurveillance SystemsPoint-to-Point RadiosPoint-to-Multi-Point RadiosMilitary & SpaceTest Instrumentation

The HMC-ALH508 is a three stage GaAs HEMT MMIC Low Noise Amplifier (LNA) which operates between 71 and 86 GHz. The HMC-ALH508 features 13 dB of small signal gain, 4.5 dB of noise figure and an output power of +7 dBm at 1 dB compression from two supply voltages at 2.1V and 2.4V respectively. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation.This versatile LNA is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.ApplicationsShort Haul / High Capacity LinksWireless LANsAutomotive RadarMilitary & SpaceE-Band Communication Systems

The HMC-ALH509 is a three stage GaAs HEM T MMIC Low Noise Amplifier (LNA) which operates between 71 and 86 GHz. The HMC-ALH509 features 14 dB of small signal gain, 5 dB of noise figure and an output power of +7 dBm at 1dB compression from a +2V supply voltage. All bond pads and the die backside are Ti/Au metallized. This versatile LNA is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.ApplicationsShort Haul / High Capacity LinksAutomotive RadarE-Band Communication SystemsTest & Measurement

The HMC-APH196 is a two stage GaAs HEMT MMIC Medium Power Amplifier which operates between 17 and 30 GHz. The HMC-APH196 provides 20 dB of gain at 20 GHz, and an output power of +22 dBm at 1 dB compression from a +4.5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation.The HMC-APH196 GaAs HEMT MMIC Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.ApplicationsPoint-to-Point RadiosPoint-to-Multi-Point RadiosVSATMilitary & Space

The HMC-APH403 is a three stage GaAs HEMT MMIC Medium Power Amplifier which operates between 37 and 45 GHz. The HMC-APH403 provides 21 dB of gain, and an output power of +23 dBm at 1 dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation.The HMC-APH403 GaAs HEMT MMIC Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.ApplicationsPoint-to-Point RadiosPoint-to-Multi-Point RadiosMilitary & Space