FQB9P25 Series

P-Channel QFET® MOSFET -250 V, -9.4 A, 620 mΩ

Catalog

P-Channel QFET® MOSFET -250 V, -9.4 A, 620 mΩ

Part	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Package / Case	FET Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
ON Semiconductor FQB9P25TM	5 V	-55 °C	150 °C	9.4 A	Surface Mount	620 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	P-Channel	TO-263 (D2PAK)	10 V	30 V	250 V	3.13 W 120 W	38 nC	MOSFET (Metal Oxide)
ON Semiconductor FQB9N50TM	5 V	-55 °C	150 °C	9 A	Surface Mount	730 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	TO-263 (D2PAK)	10 V	30 V	500 V	3.13 W 147 W		MOSFET (Metal Oxide)	1450 pF	36 nC
ON Semiconductor FQB9N08LTM	2 V	-55 °C	175 ░C	9.3 A	Surface Mount	210 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	TO-263 (D2PAK)		20 V	80 V	3.75 W 40 W		MOSFET (Metal Oxide)	280 pF		10 V	5 V

Catalog

P-Channel QFET® MOSFET -250 V, -9.4 A, 620 mΩ

Key Features

-9.4 A, -250 V, RDS(on)= 620 mΩ (Max.) @ VGS= -10 V, ID= -4.7 A

• Low Gate Charge (Typ. 29 nC)

• Low Crss (Typ. 27 pF)

• 100% Avalanche Tested

Description

These P-Channel enhancement mode power field effect transistors are produced using a proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited forhigh efficiency switching DC/DC converters.