Catalog
Ultra-High-Drive-Schottky
Key Features
• * Monolithic Design for Lowest Parasitics and Matched Junction Characteristics
• * Low Conversion Loss
• * Suitable for Applications to 26.5 GHz
• * Low Noise Figure
• * Available in High and Ultra-High Barrier Heights
• * Can be Supplied as Monolithic Devices for Hybrid Applications or as Packaged Devices
• * RoHS Compliant
Description
AI
Monolithic devices are recommended for highest frequency, broadband designs. The beamlead design eliminates the problems associated with wire bonding very small junction devices thus improving reliability and performance in MIC applications. Our in house epitaxy process capability insures repeatability for lowest conversion loss through Ku Band. A broad range of unique metallization schemes produce Microsemi's complete line of barrier heights. Diodes are available with barrier heights ranging from 600 mV to 1300 mV per leg. By optimizing epitaxy and metallization, these devices achieve lowest Rs-Cj products resulting in exceptional conversion loss and performance. "High Rel" screening is available on packaged devices per your requirements.