STL18N60M2 Series
N-channel 600 V, 278 mOhm typ., 9 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package
Manufacturer: STMicroelectronics
Catalog
N-channel 600 V, 278 mOhm typ., 9 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package
| Part | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) [Max] | Mounting Type | Rds On (Max) @ Id, Vgs [Max] | Operating Temperature | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Supplier Device Package | Technology | Package / Case | Drain to Source Voltage (Vdss) | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 9 A | 57 W | Surface Mount | 308 mOhm | 150 °C | 791 pF | N-Channel | PowerFlat™ (5x6) HV | MOSFET (Metal Oxide) | 8-PowerVDFN | 600 V | 25 V | 21.5 nC | 4 V | 10 V |
Description
AI
This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.