
LT1122 Series
Manufacturer: Analog Devices

IC OPAMP JFET 1 CIRCUIT 8CERDIP
| Part | Gain Bandwidth Product | Package / Case | Package / Case | Package / Case | Voltage - Input Offset | Slew Rate | Mounting Type | Current - Input Bias | Supplier Device Package | Voltage - Supply Span (Min) [Min] | Operating Temperature [Max] | Operating Temperature [Min] | Current - Supply | Amplifier Type | Number of Circuits | Voltage - Supply Span (Max) [Max] | Package / Case [y] | Package / Case [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Devices | 14 MHz | 7.62 mm | 0.3 in | 8-CDIP | 120 µV | 80 V/µs | Through Hole | 10 pA | 8-CERDIP | 10 V | 85 °C | -40 °C | 7.5 mA | J-FET | 1 | 36 V | ||
Analog Devices | 13 MHz | 8-SOIC | 130 µV | 75 V/µs | Surface Mount | 12 pA | 8-SO | 10 V | 85 °C | -40 °C | 7.8 mA | J-FET | 1 | 36 V | 3.9 mm | 0.154 in | ||
Analog Devices | 13 MHz | 8-SOIC | 130 µV | 75 V/µs | Surface Mount | 12 pA | 8-SO | 10 V | 85 °C | -40 °C | 7.8 mA | J-FET | 1 | 36 V | 3.9 mm | 0.154 in | ||
Analog Devices | 13 MHz | 8-SOIC | 130 µV | 75 V/µs | Surface Mount | 12 pA | 8-SO | 10 V | 85 °C | -40 °C | 7.8 mA | J-FET | 1 | 36 V | 3.9 mm | 0.154 in | ||
Analog Devices | 13 MHz | 8-SOIC | 130 µV | 75 V/µs | Surface Mount | 12 pA | 8-SO | 10 V | 85 °C | -40 °C | 7.8 mA | J-FET | 1 | 36 V | 3.9 mm | 0.154 in | ||
Analog Devices | 14 MHz | 7.62 mm | 0.3 in | 8-CDIP | 120 µV | 80 V/µs | Through Hole | 10 pA | 8-CERDIP | 10 V | 85 °C | -40 °C | 7.5 mA | J-FET | 1 | 36 V | ||
Analog Devices | 13 MHz | 7.62 mm | 0.3 in | 8-DIP | 130 µV | 75 V/µs | Through Hole | 12 pA | 8-PDIP | 10 V | 85 °C | -40 °C | 7.8 mA | J-FET | 1 | 36 V | ||
Analog Devices | 13 MHz | 8-SOIC | 130 µV | 75 V/µs | Surface Mount | 12 pA | 8-SO | 10 V | 85 °C | -40 °C | 7.8 mA | J-FET | 1 | 36 V | 3.9 mm | 0.154 in | ||
Analog Devices | 13 MHz | 8-SOIC | 130 µV | 75 V/µs | Surface Mount | 12 pA | 8-SO | 10 V | 85 °C | -40 °C | 7.8 mA | J-FET | 1 | 36 V | 3.9 mm | 0.154 in | ||
Analog Devices | 13 MHz | 7.62 mm | 0.3 in | 8-DIP | 130 µV | 75 V/µs | Through Hole | 12 pA | 8-PDIP | 10 V | 85 °C | -40 °C | 7.8 mA | J-FET | 1 | 36 V |