DRV5012 Series

Low power (as low as 3.3-µA), low voltage (up to 5.5-V) Hall effect latch

Catalog

Low power (as low as 3.3-µA), low voltage (up to 5.5-V) Hall effect latch

Part	Mounting Type	Test Condition [Min]	Test Condition [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Sensing Range	Output Type	Technology	Current - Output (Max) [Max]	Features	Current - Supply (Max) [Max]	Polarization	Function	Voltage - Supply [Max]	Voltage - Supply [Min]	Package / Case
Texas Instruments DRV5012AEDMRT	Surface Mount	-40 °C	85 °C	85 °C	-40 °C	4-X2SON	-3.3 mT 3.3 mT	Push-Pull	Hall Effect	5 mA	Temperature Compensated	5 mA	North Pole South Pole	Latch	5.5 V	1.65 V	4-XFDFN Exposed Pad
Texas Instruments DRV5012AEDMRR	Surface Mount	-40 °C	85 °C	85 °C	-40 °C	4-X2SON	-3.3 mT 3.3 mT	Push-Pull	Hall Effect	5 mA	Temperature Compensated	5 mA	North Pole South Pole	Latch	5.5 V	1.65 V	4-XFDFN Exposed Pad

Catalog

Low power (as low as 3.3-µA), low voltage (up to 5.5-V) Hall effect latch

Key Features

• Industry-Leading Low-Power ConsumptionPin-Selectable Sampling Rate:SEL = Low: 20 Hz Using 1.3 µA (1.8 V)SEL = High: 2.5 kHz Using 142 µA (1.8 V)1.65- to 5.5-V Operating VCCRangeHigh Magnetic Sensitivity: ±2 mT (Typical)Robust Hysteresis: 4 mT (Typical)Push-Pull CMOS OutputSmall and Thin X2SON Package–40°C to +85°C Operating Temperature RangeIndustry-Leading Low-Power ConsumptionPin-Selectable Sampling Rate:SEL = Low: 20 Hz Using 1.3 µA (1.8 V)SEL = High: 2.5 kHz Using 142 µA (1.8 V)1.65- to 5.5-V Operating VCCRangeHigh Magnetic Sensitivity: ±2 mT (Typical)Robust Hysteresis: 4 mT (Typical)Push-Pull CMOS OutputSmall and Thin X2SON Package–40°C to +85°C Operating Temperature Range

Description

The DRV5012 device is an ultra-low-power digital-latch Hall effect sensor with a pin-selectable sampling rate. ™ When a south magnetic pole is near the top of the package and the BOPthreshold is exceeded, the device drives a low voltage. The output stays low until a north pole is applied and the BRPthreshold is crossed, which causes the output to drive a high voltage. Alternating north and south poles are required to toggle the output, and integrated hysteresis separates BOPand BRPto provide robust switching. Using an internal oscillator, the DRV5012 device samples the magnetic field and updates the output at a rate of 20 Hz or 2.5 kHz, depending on the SEL pin. This dual-bandwidth feature can allow systems to monitor changes in movement while using minimal power. The device operates from a VCCrange of 1.65 V to 5.5 V, and is packaged in a small X2SON. The DRV5012 device is an ultra-low-power digital-latch Hall effect sensor with a pin-selectable sampling rate. ™ When a south magnetic pole is near the top of the package and the BOPthreshold is exceeded, the device drives a low voltage. The output stays low until a north pole is applied and the BRPthreshold is crossed, which causes the output to drive a high voltage. Alternating north and south poles are required to toggle the output, and integrated hysteresis separates BOPand BRPto provide robust switching. Using an internal oscillator, the DRV5012 device samples the magnetic field and updates the output at a rate of 20 Hz or 2.5 kHz, depending on the SEL pin. This dual-bandwidth feature can allow systems to monitor changes in movement while using minimal power. The device operates from a VCCrange of 1.65 V to 5.5 V, and is packaged in a small X2SON.