Catalog
NPN power Darlington transistor
Description
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The devices are manufactured in planar base island technology with monolithic Darlington configuration.
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NPN power Darlington transistor
NPN power Darlington transistor
| Part | Mounting Type | Operating Temperature | Power - Max [Max] | Package / Case | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Vce Saturation (Max) @ Ib, Ic | Supplier Device Package | Current - Collector (Ic) (Max) [Max] | Current - Collector Cutoff (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | Through Hole | 150 °C | 40 W | TO-126-3 TO-225AA | 750 | 2.8 V | SOT-32-3 | 4 A | 500 çA | 80 V |