FDMS3620S Series

Asymmetric Dual N-Channel PowerTrench® PowerStage MOSFET, 25V

Catalog

Asymmetric Dual N-Channel PowerTrench® PowerStage MOSFET, 25V

Part	Technology	Package / Case	Configuration	Mounting Type	FET Feature	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id
ON Semiconductor FDMS3620S	MOSFET (Metal Oxide)	8-PowerTDFN	2 N-Channel (Dual) Asymmetrical	Surface Mount	Logic Level Gate	25 V	-55 °C	150 °C	Power56	4.7 mOhm	1 W	26 nC	1570 pF	2 V

Catalog

Asymmetric Dual N-Channel PowerTrench® PowerStage MOSFET, 25V

Key Features

• Q1: N-ChannelMax rDS(on)= 4.7 mΩ at VGS= 10 V, ID = 17.5 AMax rDS(on)= 5.5 mΩ at VGS= 4.5 V, ID = 16 A

• Q2: N-ChannelMax rDS(on)= 1.0 mΩ at VGS= 10 V, ID = 38 AMax rDS(on)= 1.2 mΩ at VGS= 4.5 V, ID = 35 A

• Low inductance packaging shortens rise/fall times, resulting in lower switching losses

• MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing

• RoHS Compliant

Description

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.